Experimental requirements for the measurement of excess carrier lifetime in semiconductors using microwave techniques

1990 ◽  
Vol 39 (6) ◽  
pp. 1054-1058 ◽  
Author(s):  
M.S. Wang ◽  
J.M. Borrego
Keyword(s):  
Carrier Lifetime ◽  
Excess Carrier ◽  
Microwave Techniques

The Excess Carrier Lifetime in P-Type HgCdTe Measured by Photoconductive Decay

2005 ◽  
Author(s):  
R. Fastow ◽  
Y. Nemirovsky
Keyword(s):  
Carrier Lifetime ◽  
Photoconductive Decay ◽  
Excess Carrier ◽  
P Type

Local Lifetime Control in 4H-SiC by Proton Irradiation

2018 ◽  
Vol 924 ◽  
pp. 436-439 ◽  
Author(s):  
Pavel Hazdra ◽  
Stanislav Popelka ◽  
Adolf Schöner
Keyword(s):  
Low Temperature ◽  
Proton Irradiation ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Pin Diode ◽  
Radiation Defects ◽  
Excess Carrier ◽  
Low Temperature Annealing ◽  
Irradiation Energy ◽  
Proton Implantation

The effect of local lifetime control by proton irradiation on the OCVD response of a 10 kV SiC PiN diode was investigated. Carrier lifetime was reduced locally by irradiation with 800 keV protons at fluences up to 1x1011cm-2. Radiation defects were characterized by DLTS and C-V profiling; excess carrier dynamics were measured by the OCVD and analyzed using the calibrated device simulator ATLAS from Silvaco, Inc. Results show that proton implantation followed by low temperature annealing can be used for controllable local lifetime reduction in SiC devices. The dominant recombination centre is the Z1/2defect, whose distribution can be set by irradiation energy and fluence. The local lifetime reduction, which improves diode recovery, can be monitored by OCVD response and simulated using the SRH model accounting for the Z1/2defect.

Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

2007 ◽  
Vol 46 (8A) ◽  
pp. 5057-5061 ◽  
Author(s):  
Masashi Kato ◽  
Masahiko Kawai ◽  
Tatsuhiro Mori ◽  
Masaya Ichimura ◽  
Shingo Sumie ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Excess Carrier ◽  
Photoconductivity Decay ◽  
P Type ◽  
Sic Wafer

Excess carrier lifetime of 3C–SiC measured by the microwave photoconductivity decay method

1997 ◽  
Vol 70 (13) ◽  
pp. 1745-1747 ◽  
Author(s):  
M. Ichimura ◽  
H. Tajiri ◽  
Y. Morita ◽  
N. Yamada ◽  
A. Usami
Keyword(s):  
Carrier Lifetime ◽  
Excess Carrier ◽  
Photoconductivity Decay

Effects of Strain-Induced Defects on Excess Carrier Lifetime and Ambipolar Diffusion in nipi-Doped In0.2Ga0.8As/GaAs Mqws

1995 ◽  
Vol 379 ◽  
Author(s):  
H.T. Lin ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Carrier Density ◽  
Carrier Transport ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Ambipolar Diffusion ◽  
Structural Defects ◽  
Multiple Quantum ◽  
Coulombic Interaction ◽  
Excess Carrier ◽  
Induced Defects

ABSTRACTThe effects of strain-induced defects on excess carrier lifetime and transport in a nipi-doped In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure were examined with a new method called electron beam-induced absorption modulation (EBIA) in which the kinetics of carrier transport and recombination are examined with a high-spatial, -spectral and -temporal resolution. The excess carrier lifetime and ambipolar diffusion were found to be reduced by factors of ∼1013 and ∼103 compared to theoretical values, respectively, and this is attributed to the presence of strain-induced defects. The MQW excitonic absorption coefficient sensitively depends on the carrier density in the QWs, as a result of screening of the electron-hole (e-h) Coulombic interaction. Likewise, ambipolar diffusion is found to depend on the excess carrier density in a nonlinear fashion, as a result of the e-h plasma-induced changes in the local depletion widths in the vicinity of structural defects.

Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation

2012 ◽  
Vol 51 (2R) ◽  
pp. 028006 ◽  
Author(s):  
Masashi Kato ◽  
Yoshinori Matsushita ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Carrier Lifetime ◽  
Low Energy ◽  
Energy Electron ◽  
Excess Carrier ◽  
Low Energy Electron ◽  
P Type

DIFFUSION LENGTH AND EFFECTIVE CARRIER LIFETIME IN III-NITRIDES

2007 ◽  
Vol 06 (05) ◽  
pp. 323-326 ◽  
Author(s):  
N. M. SHMIDT ◽  
A. N. TITKOV ◽  
E. B. YAKIMOV
Keyword(s):  
Carrier Transport ◽  
Carrier Lifetime ◽  
Diffusion Length ◽  
Boundary Effect ◽  
Domain Boundary ◽  
Effective Diffusion ◽  
Light Emitting ◽  
Excess Carrier ◽  
Lateral Localization ◽  
Effective Carrier

The results of excess carrier diffusion length investigations in GaN and in the light emitting structures (LES) based on MQW InGaN / GaN with different ordering of mosaic structures are presented. It is confirmed that the diffusion length values in these structures indeed are essentially lower than 1 μm. The Electron Beam Induced Current investigations have shown that the effective diffusion length measured on GaN structures could be determined by the mosaic domain boundary effect on the excess carrier transport. Such nanosize domains could also determine the lateral localization in the MQW light emitting diodes. The mosaic structure ordering effect on the quantum efficiency of LES and high values of the effective carrier lifetime in well-ordered LES are discussed.

Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC

2001 ◽  
Vol 79 (3) ◽  
pp. 365-367 ◽  
Author(s):  
A. Galeckas ◽  
J. Linnros ◽  
M. Frischholz ◽  
V. Grivickas
Keyword(s):  
Carrier Lifetime ◽  
Surface Recombination ◽  
Optical Characterization ◽  
Excess Carrier
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