The Excess Carrier Lifetime in P-Type HgCdTe Measured by Photoconductive Decay

We measured the excess carrier lifetimes in as-grown and electron irradiated p-type 4H-SiC epitaxial layers with the microwave photoconductivity decay (-PCD) method. The carrier lifetime becomes longer with excitation density for the as-grown epilayer. This dependence suggests that e ≥h for the dominant recombination center, where e andh are capture cross sections for electrons and holes, respectively. In contrast, the carrier lifetime does not depend on the excitation density for the sample irradiated with electrons at an energy of 160 keV and a dose of 1×1017 cm-2. This may be due to the fact that recombination centers with e <<h were introduced by the electron irradiation or due to the fact that the acceptor concentration was decreased significantly by the irradiation.

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Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.028006 ◽

2012 ◽

Vol 51 ◽

pp. 028006 ◽

Cited By ~ 2

Author(s):

Masashi Kato ◽

Yoshinori Matsushita ◽

Masaya Ichimura ◽

Tomoaki Hatayama ◽

Takeshi Ohshima

Keyword(s):

Electron Irradiation ◽

Carrier Lifetime ◽

Low Energy ◽

Energy Electron ◽

Excess Carrier ◽

Low Energy Electron ◽

P Type

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12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1187 ◽

2008 ◽

Vol 600-603 ◽

pp. 1187-1190 ◽

Cited By ~ 22

Author(s):

Q. Jon Zhang ◽

Charlotte Jonas ◽

Joseph J. Sumakeris ◽

Anant K. Agarwal ◽

John W. Palmour

Keyword(s):

Carrier Lifetime ◽

Drift Region ◽

Gate Bias ◽

Enhancement Layer ◽

Channel Mobility ◽

Dc Characteristics ◽

Blocking Voltage ◽

High Carrier ◽

P Type ◽

First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

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Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.440.82 ◽

2013 ◽

Vol 440 ◽

pp. 82-87 ◽

Cited By ~ 2

Author(s):

Mohammad Jahangir Alam ◽

Mohammad Ziaur Rahman

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Multicrystalline Silicon ◽

Recombination Lifetime ◽

Spatially Resolved ◽

Carrier Recombination ◽

Negative Role ◽

P Type ◽

The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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