Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

1997 ◽  
Vol 44 (6) ◽  
pp. 2001-2006 ◽  
Author(s):  
F. Saigne ◽  
L. Dusseau ◽  
J. Fesquet ◽  
J. Gasiot ◽  
R. Ecoffet ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Thermal Effects ◽  
Experimental Validation ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap Level ◽  
Oxide Trap

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

1996 ◽  
Vol 80 (3) ◽  
pp. 1578-1582 ◽  
Author(s):  
H. Kobayashi ◽  
K. Namba ◽  
Y. Yamashita ◽  
Y. Nakato ◽  
T. Komeda ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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