Class E tuned power amplifier with antiparallel diode or series diode at switch, with any loaded Q and switch duty cycle

1989 ◽  
Vol 36 (9) ◽  
pp. 1201-1209 ◽  
Author(s):  
M.K. Kazimierczuk ◽  
K. Puczko
Keyword(s):  

2013 ◽  
Vol 7 (3) ◽  
pp. 243-255 ◽  
Author(s):  
Hung-Wei Chiu ◽  
Chien-Chi Lu ◽  
Jia-min Chuang ◽  
Wei-Tso Lin ◽  
Chii-Wann Lin ◽  
...  


Author(s):  
Yusmarnita Yusop ◽  
Mohd Shakir Md Saat ◽  
Siti Huzaimah Husin ◽  
Sing Kiong Nguang ◽  
Imran Hindustan

<p>This paper presents the simulation and experimental of Class-E power amplifier which consists of a load network and a single transistor. The transistor is operated as a switch at the carrier frequency of the output signal. In general, Class-E power amplifier is often used in designing a high frequency ac power source because of its ability to satisfy the zero voltage switching (ZVS) conditions efficiently even when working at high frequencies with significant reduction in switching losses. In this paper, a 10W Class-E power amplifier is designed, constructed, and tested in the laboratory. SK40C microcontroller board with PIC16F877A is used to generate a pulse width modulation (PWM) switching signal to drive the IRF510 MOSFET. To be specific, in this paper, the effect on switching and performance at 1MHz frequency are studied in order to understand the Class-E inverter behavior. Performance parameters relationships were observed and analysed in respect to the load and duty cycle. Theoretical calculations, simulation and experimental results for optimum operation using selected component values are then compared and presented.</p>



1987 ◽  
Vol 34 (2) ◽  
pp. 149-159 ◽  
Author(s):  
M. Kazimierczuk ◽  
K. Puczko


2015 ◽  
Vol E98.C (4) ◽  
pp. 377-379
Author(s):  
Jonggyun LIM ◽  
Wonshil KANG ◽  
Kang-Yoon LEE ◽  
Hyunchul KU


2021 ◽  
Author(s):  
Ahmad Fariz Hasan ◽  
Sohiful Anuar Zainol Murad ◽  
Faizah Abu Bakar


2021 ◽  
Vol 11 (9) ◽  
pp. 3727
Author(s):  
Ingrid Casallas ◽  
Carlos-Ivan Paez-Rueda ◽  
Gabriel Perilla ◽  
Manuel Pérez ◽  
Arturo Fajardo

This paper proposes an analytical expression set to determine the maximum values of currents and voltages in the Class-E Power Amplifier (PA) with Finite DC-Feed Inductance (FDI) under the following assumptions—ideal components (e.g., inductors and capacitors with infinite quality factor), a switch with zero rise and fall commutation times, zero on-resistance, and infinite off-resistance, and an infinite loaded quality factor of the output resonant circuit. The developed expressions are the average supply current, the RMS (Root Mean Square) current through the DC-feed inductance, the peak voltage and current in the switch, the RMS current through the switch, the peak voltages of the output resonant circuit, and the peak voltage and current in the PA load. These equations were obtained from the circuit analysis of this ideal amplifier and curve-fitting tools. Furthermore, the proposed expressions are a useful tool to estimate the maximum ratings of the amplifier components. The accuracy of the expressions was analyzed by the circuit simulation of twelve ideal amplifiers, which were designed to meet a wide spectrum of application scenarios. The resulting Mean Absolute Percentage Error (MAPE) of the maximum-rating constraints estimation was 2.64%.



Author(s):  
Arriel Ting ◽  
Anastacia Alvarez ◽  
Maria Theresa De Leon ◽  
Marc Rosales ◽  
Maria Patricia Rouelli Sabino ◽  
...  
Keyword(s):  


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