Thermal Stability of Bulk Heterojunction Photovoltaics Revealed by Electrical Scanning Probe Microscopy

2018 ◽  
Author(s):  
Denghua Li ◽  
Zhemin Li ◽  
Shiwei Xu ◽  
Denghua Li ◽  
Yanlian Yang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Scanning Probe Microscopy ◽  
Bulk Heterojunction ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Bulk Heterojunction Photovoltaics ◽  
Thermal Stability Of

scholarly journals Morphology stabilization strategies for small-molecule bulk heterojunction photovoltaics

2017 ◽  
Vol 5 (33) ◽  
pp. 17517-17524 ◽  
Author(s):  
Aiman Rahmanudin ◽  
Xavier A. Jeanbourquin ◽  
Simon Hänni ◽  
Arvindh Sekar ◽  
Emilie Ripaud ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solar Cells ◽  
Small Molecule ◽  
Organic Solar Cells ◽  
Bulk Heterojunction ◽  
Bulk Heterojunction Photovoltaics ◽  
Thermal Stability Of

Strategies for enhancing the thermal stability of small-molecule organic solar cells are demonstrated and compared with two molecularly engineered additives.

Enhancing the thermal stability of the bulk-heterojunction photovoltaics based on P3HT/PCBM by incorporating diblock amphipathic P3HT–PEO at D/A interface

RSC Advances ◽  
2016 ◽  
Vol 6 (66) ◽  
pp. 61934-61943 ◽  
Author(s):  
Jikang Liu ◽  
Xiaoguang Zhu ◽  
Junli Li ◽  
Jiulin Shen ◽  
Guoli Tu
Keyword(s):  
Thermal Stability ◽  
Bulk Heterojunction ◽  
Bulk Heterojunction Photovoltaics ◽  
Thermal Stability Of

A diblock amphipathic copolymer P3HT–PEO was rationally designed and easily synthesized.

Investigating the role of efficiency enhancing interlayers for bulk heterojunction solar cells by scanning probe microscopy

2014 ◽  
Vol 15 (6) ◽  
pp. 1282-1289 ◽  
Author(s):  
Jeroen Drijkoningen ◽  
Jurgen Kesters ◽  
Tim Vangerven ◽  
Emilie Bourgeois ◽  
Laurence Lutsen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Scanning Probe Microscopy ◽  
Bulk Heterojunction ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

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