MOSFET-only switched-capacitor circuits in digital CMOS technology

1999 ◽  
Vol 34 (6) ◽  
pp. 734-747 ◽  
Author(s):  
H. Yoshizawa ◽  
Yunteng Huang ◽  
P.F. Ferguson ◽  
G.C. Temes
2020 ◽  
Vol 11 (1) ◽  
pp. 1
Author(s):  
Alessandro Catania ◽  
Mattia Cicalini ◽  
Massimo Piotto ◽  
Paolo Bruschi ◽  
Michele Dei

Slew-rate enhancement (SRE) techniques assist the charge transfer process in OTA-based switched-capacitor circuits. Parallel-type slew-rate enhancement circuits, i.e., circuits that provide a feed-forward path external to the main OTA, are attractive solutions, since they introduce a further degree of freedom in the speed/power consumption design space without affecting other specifications regarding the main OTA. This technique lends itself to be employed jointly with advanced OTA topologies in order to compose a highly energy efficient OTA/SRE system. However, insights in design choices such as power optimization are still missing for such systems. Here we discuss system level choices with the help of a simple model. Using precise electrical simulations, we demonstrate energy savings greater than 30% for different OTA/SRE systems implemented in a standard 180-nm CMOS technology.


2015 ◽  
Vol 19 (1) ◽  
pp. 32
Author(s):  
Dejan D. Mirković ◽  
Predrag M. Petković ◽  
Ilija Dimitrijević ◽  
Igor Mirčić

This paper presents transistor level design ofoperational transconductance amplifier in CMOS technology.Custom designed, circuit is to be built-in into the mixed-signal,switched capacitor circuit. Amplifier targets relatively high slewrateand moderate open loop gain with megahertz order gainbandwidth.Adopted architecture is discussed appreciatingapplication in switched capacitor circuits. Circuit behavior isexamined through set of simulations. Obtained results confirmeddesired behavior. Target technology process is TSMC 350nm.


2016 ◽  
Vol 25 (5) ◽  
pp. 326-332
Author(s):  
Bich Son ◽  
Byeong-Jun Park ◽  
Gwang-Hoe Gu ◽  
Dae-Eun Cho ◽  
Hueon-Beom Park ◽  
...  

Author(s):  
Ahmed S. Al-Jawadi ◽  
Mohammed A. Al-Shorbaji ◽  
Shamil H. Hussein ◽  
K. Khalid

Analytical optimization is used to create an optimized design of integrated switched-capacitor charge pump (CP) circuits. In integrated circuits design, voltage gain, output resistance, output ripple voltage, conversion efficiency, and capacitor sizing based on area constraints and power consumption are required for manufacturing. In this paper, an analytical optimization is performed and applied to conventional and bootstrapped techniques for fifth stages switched-capacitor charge pump circuits in order to optimize the parameter values. These circuits result in the appropriate function formulations that result in low power, minimum charge, and minimal area of the silicon chip. This paper describes an optimization method based on the improvement of these parameters that requires a trade-off between the above variables of the bootstrapped technique. The simulated circuits are designed in 0.5-μm complementary metal oxide semiconductor (CMOS) technology with 2 V devices. All of the integrated switched-capacitor circuits were designed with the same specification, which include 10 pF stage capacitance, 2 V supply voltage, clock frequency of 50 MHz and identical sizes of charge transfer switches (transistors). The bootstrapped technique that was implemented for all of the CPs' circuits has good efficiency of about (68.5 %), compared with (53 %) for conventional CPs' circuits.


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