High current gain, low offset voltage heterostructure emitter bipolar transistors

1994 ◽  
Vol 15 (9) ◽  
pp. 336-338 ◽  
Author(s):  
H.R. Chen ◽  
C.Y. Chang ◽  
C.P. Lee ◽  
C.H. Huang ◽  
J.S. Tsang ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
High Current ◽  
Offset Voltage ◽  
Low Offset

scholarly journals MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors

2002 ◽  
Vol 25 (3) ◽  
pp. 239-243
Author(s):  
K. F. Yarn
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Gain ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Offset Voltage ◽  
Delta Doping ◽  
Spacer Layer ◽  
Potential Spike ◽  
Low Offset

The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and an Ic ideal factor of 1.01 are obtained, respectively. The use of delta doping sheet at BE junction results in a high gain and low offset voltage HBT. The improvement of current gain and offset voltage may be attributed to the reduction of BE potential spike by introducing a delta doping layer even without the BE junction passivation.

An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

2012 ◽  
Vol 521 ◽  
pp. 172-175 ◽  
Author(s):  
Jung-Hui Tsai ◽  
Wen-Shiung Lour ◽  
Yi-Ting Chao ◽  
Sheng-Shiun Ye ◽  
Yung-Chun Ma ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Offset Voltage ◽  
Low Offset

High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

1988 ◽  
Vol 9 (10) ◽  
pp. 524-526 ◽  
Author(s):  
R.N. Nottenburg ◽  
Y.-K. Chen ◽  
M.B. Panish ◽  
R. Hamm ◽  
D.A. Humphrey
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
High Current

scholarly journals High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

2003 ◽  
Vol 50 (10) ◽  
pp. 2154-2158 ◽  
Author(s):  
Bei-Ping Yan ◽  
E.S. Yang ◽  
Yue-Fei Yang ◽  
Xiao-Qin Wang ◽  
Chung-Chi Hsu
Keyword(s):  
Thermal Management ◽  
High Efficiency ◽  
Bipolar Transistors ◽  
Offset Voltage ◽  
Low Offset
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