Comments on "17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide"

IEEE Electron Device Letters ◽

10.1109/55.728909 ◽

1998 ◽

Vol 19 (11) ◽

pp. 447-449

Author(s):

A. Rohatgi ◽

J. Moschner ◽

M.A. Green

Keyword(s):

Solar Cells ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Comments on "17.3% Efficiency Metal-oxide-semiconductor (MOS) Solar Cells With Liquid-phase-deposited Silicon Dioxide"

IEEE Electron Device Letters ◽

10.1109/led.1998.728908 ◽

1998 ◽

Vol 19 (11) ◽

pp. 447-447

Author(s):

A. Rohatgi ◽

J. Moschner

Keyword(s):

Solar Cells ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Metal oxide semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method

IEEE Photonics Technology Letters ◽

10.1109/68.481154 ◽

1996 ◽

Vol 8 (3) ◽

pp. 420-421 ◽

Author(s):

Yi-Pin Shen ◽

Jenn-Gwo Hwu

Keyword(s):

Solar Cells ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Liquid Phase Deposition ◽

Deposition Method

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17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide

IEEE Electron Device Letters ◽

10.1109/55.641447 ◽

1997 ◽

Vol 18 (11) ◽

pp. 565-567 ◽

Author(s):

Kuo-Chung Lee ◽

Jenn-Gwo Hwu

Keyword(s):

Solar Cells ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.086503 ◽

2009 ◽

Vol 48 (8) ◽

pp. 086503 ◽

Author(s):

Chung Yuan Kung ◽

Jun Dar Hwang ◽

Yu Hong Chen ◽

Pan Sheu Chen ◽

Hsun Joung Chan

Keyword(s):

Liquid Phase ◽

Electrical Properties ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Liquid Phase Deposition

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Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium

Thin Solid Films ◽

10.1016/j.tsf.2010.08.114 ◽

2010 ◽

Vol 519 (2) ◽

pp. 833-835 ◽

Author(s):

J.D. Hwang ◽

D.S. Lin ◽

Y.L. Lin ◽

W.T. Chang ◽

G.H. Yang

Keyword(s):

Liquid Phase ◽

Electrical Properties ◽

Metal Oxide ◽

Silicon Dioxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Application of liquid phase deposited silicon dioxide to metal-oxide-semiconductor capacitor and amorphous silicon thin-film transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.485542 ◽

1996 ◽

Vol 43 (4) ◽

pp. 599-604 ◽

Author(s):

Jenq-Shiuh Chou ◽

Si-Chen Lee

Keyword(s):

Thin Film ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Amorphous Silicon ◽

Thin Film Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film ◽

Metal Oxide Semiconductor Capacitor

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Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors

ECS Transactions ◽

10.1149/1.3206635 ◽

2019 ◽

Vol 25 (6) ◽

pp. 361-370

Author(s):

Chih-Yao Wang ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Temperature Sensors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2963705 ◽

2008 ◽

Vol 104 (3) ◽

pp. 034313 ◽

Author(s):

Gargi Chakraborty ◽

C. K. Sarkar

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Tunneling Currents

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Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.1489500 ◽

2002 ◽

Vol 92 (4) ◽

pp. 2202-2206 ◽

Author(s):

Hisham Z. Massoud ◽

Henryk M. Przewlocki

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Index Of Refraction ◽

Oxide Semiconductor ◽

Effects Of Stress

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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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