Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy

1994 ◽  
Vol 6 (9) ◽  
pp. 1073-1075 ◽  
Author(s):  
R.M. Lammert ◽  
T.M. Cockerill ◽  
D.V. Forbes ◽  
G.M. Smith ◽  
J.J. Coleman
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Buried Heterostructure

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation

Emission spectra of single quantum well lasers with inhomogeneous current injection

1988 ◽  
Vol 64 (3) ◽  
pp. 1022-1026 ◽  
Author(s):  
Yasunori Tokuda ◽  
Yuji Abe ◽  
Teruhito Matsui ◽  
Kyozo Kanamoto ◽  
Noriaki Tsukada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Emission Spectra ◽  
Current Injection ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well
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