High temperature pulsed and continuous‐wave operation and thermally stable threshold characteristics of vertical‐cavity surface‐emitting lasers grown by metalorganic chemical vapor deposition

1994 ◽  
Vol 65 (11) ◽  
pp. 1337-1339 ◽  
Author(s):  
Bo Lu ◽  
P. Zhou ◽  
Julian Cheng ◽  
K. J. Malloy ◽  
J. C. Zolper
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Cavity Surface ◽  
Continuous Wave Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

850-NM VERTICAL-CAVITY SURFACE-EMITTING LASERS ON SI SUBSTRATES

2000 ◽  
Vol 10 (01) ◽  
pp. 319-326
Author(s):  
Y. ZHOU ◽  
Y. XIONG ◽  
Y.-H. LO ◽  
C. JI ◽  
Z. H. ZHU ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Light Output ◽  
Cavity Surface ◽  
Light Output Power ◽  
Si Substrates ◽  
Continuous Wave Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.

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