scholarly journals A Methodology for Prognostics Under the Conditions of Limited Failure Data Availability

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 183996-184007 ◽  
Author(s):  
Gishan D. Ranasinghe ◽  
Tony Lindgren ◽  
Mark Girolami ◽  
Ajith K. Parlikad
2020 ◽  
Vol 53 (3) ◽  
pp. 265-270
Author(s):  
Gishan Don Ranasinghe ◽  
David Yearling ◽  
Mark Girolami ◽  
Ajith Kumar Parlikad

2006 ◽  
Vol 5 (1) ◽  
pp. 134-134
Author(s):  
L SCELSI ◽  
L TAVAZZI ◽  
A MAGGIONI ◽  
D LUCCI ◽  
G CACCIATORE ◽  
...  

2018 ◽  
Vol 18 (3) ◽  
pp. 250-259 ◽  
Author(s):  
Yangwoo Seo ◽  
Kyeshin Lee ◽  
Younho Lee ◽  
Jeyong Kim

Author(s):  
Nur Amiratun Nazihah Roslan ◽  
Hairulnizam Mahdin ◽  
Shahreen Kasim

With the rise of social networking approach, there has been a surge of users generated content all over the world and with that in an era where technology advancement are up to the level where it could put us in a step ahead of pathogens and germination of diseases, we couldn’t help but to take advantage of that advancement and provide an early precaution measures to overcome it. Twitter on the other hand are one of the social media platform that provides access towards a huge data availability. To manipulate those data and transform it into an important information that could be used in many different scope that could help improve people’s life for the better. In this paper, we gather all algorithm that are available inside Meta Classifier to compare between them on which algorithm suited the most with the dengue fever dataset. This research are using WEKA as the data mining tool for data analyzation.


Author(s):  
Rommel Estores ◽  
Pascal Vercruysse ◽  
Karl Villareal ◽  
Eric Barbian ◽  
Ralph Sanchez ◽  
...  

Abstract The failure analysis community working on highly integrated mixed signal circuitry is entering an era where simultaneously System-On-Chip technologies, denser metallization schemes, on-chip dissipation techniques and intelligent packages are being introduced. These innovations bring a great deal of defect accessibility challenges to the failure analyst. To contend in this era while aiming for higher efficiency and effectiveness, the failure analysis environment must undergo a disruptive evolution. The success or failure of an analysis will be determined by the careful selection of tools, data and techniques in the applied analysis flow. A comprehensive approach is required where hardware, software, data analysis, traditional FA techniques and expertise are complementary combined [1]. This document demonstrates this through the incorporation of advanced scan diagnosis methods in the overall analysis flow for digital functionality failures and supporting the enhanced failure analysis methodology. For the testing and diagnosis of the presented cases, compact but powerful scan test FA Lab hardware with its diagnosis software was used [2]. It can therefore easily be combined with the traditional FA techniques to provide stimulus for dynamic fault localizations [3]. The system combines scan chain information, failure data and layout information into one viewing environment which provides real analysis power for the failure analyst. Comprehensive data analysis is performed to identify failing cells/nets, provide a better overview of the failure and the interactions to isolate the fault further to a smaller area, or to analyze subtle behavior patterns to find and rationalize possible faults that are otherwise not detected. Three sample cases will be discussed in this document to demonstrate specific strengths and advantages of this enhanced FA methodology.


Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.


Sign in / Sign up

Export Citation Format

Share Document