scholarly journals P-type Cu2O Thin Film Transistors for Active Matrix Displays: Physical Modeling and Numerical Simulation

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Kadiyam Rajshekar ◽  
D Kannadassan
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Physical Modeling ◽  
Thin Film Transistors ◽  
Active Matrix ◽  
Active Matrix Displays ◽  
Cu2o Thin Film ◽  
P Type

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

Organic Thin-Film-Transistors with High on/off Ratios

1995 ◽  
Vol 377 ◽  
Author(s):  
L. Torsi ◽  
A. Dodabalapur ◽  
H. E. Katz ◽  
A. J. Lovinger ◽  
R. Ruel
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Switching Time ◽  
Channel Length ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Short Channel ◽  
Active Matrix ◽  
Current Voltage ◽  
Active Matrix Displays

ABSTRACTIn this article a new procedure to obtain alpha-hexathienylene (α-6T) thin-film-transistors (TFTs) with on/off ratios in excess of one million is reported. This procedure involves subjecting the TFTs to rapid thermal annealing. Previously, high on/off ratios have been achieved with improved device design and better chemical synthesis of α-6T oligomers. High on/off ratios, along with a switching time of ∼ 10 μs, render α-6T TFTs potential candidates as switching devices in active matrix displays. The experimental current-voltage (I-V) characteristics of oc-6T TFTs with channel length L = 4μm are also presented and a measured field effect mobility of 0.02 cm2/V-s is extracted from these characteristics using an analytical model which we have developed for short-channel α-6T TFTs.

scholarly journals THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING

Doklady BGUIR ◽  
2019 ◽  
pp. 101-106
Author(s):  
B. A. Kazarkin ◽  
A. A. Stepanov ◽  
Y. U. Mukha ◽  
I. I. Zakharchenia ◽  
Y. A. Khakhlou ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Chemical Deposition ◽  
High Mobility ◽  
Nitrogen Atmosphere ◽  
Semiconductor Layer ◽  
Active Matrix ◽  
Mobility Of Charge Carriers ◽  
Active Matrix Displays ◽  
New Generation

The paper presents the results of a study of thin-film transistors based on the InGaZnO semiconductor compound (IGZO) for active-matrix displays addressing formed by magnetron plasma-chemical deposition. Their structural-morphological and electrophysical properties are investigated. Carrier mobility is analyzed using the Hall method. The effect of annealing in vacuum, an oxygen atmosphere, and a nitrogen atmosphere on the grain size of an IGZO film was investigated. The resulting layers are characterized by high mobility of charge carriers, which allows their use in the manufacture of new-generation LCD and OLED displays.

scholarly journals The Origin of the High Off-State Current in p-Type Cu2O Thin Film Transistors

2017 ◽  
Vol 38 (10) ◽  
pp. 1394-1397 ◽  
Author(s):  
Sanggil Han ◽  
Andrew J. Flewitt
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Cu2o Thin Film ◽  
P Type

Decoder-Type Gate Driver Circuits Fabricated with Amorphous Silicon Thin-Film Transistors for Active Matrix Displays

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CC03 ◽  
Author(s):  
Tae-Wook Kim ◽  
Gyu-Tae Park ◽  
Byong-Deok Choi ◽  
MunPyo Hong ◽  
Jin-Nyoung Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Active Matrix Displays ◽  
Gate Driver
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