scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

scholarly journals The Origin of the High Off-State Current in p-Type Cu2O Thin Film Transistors

2017 ◽  
Vol 38 (10) ◽  
pp. 1394-1397 ◽  
Author(s):  
Sanggil Han ◽  
Andrew J. Flewitt
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Cu2o Thin Film ◽  
P Type

scholarly journals Dual role of Ag nanowires in ZnO quantum dot/Ag nanowire hybrid channel photo thin film transistors

RSC Advances ◽  
2018 ◽  
Vol 8 (15) ◽  
pp. 8349-8354 ◽  
Author(s):  
Weihao Wang ◽  
Xinhua Pan ◽  
Xiaoli Peng ◽  
Qiaoqi Lu ◽  
Fengzhi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Thin Film Transistors ◽  
High Speed ◽  
Electronic Devices ◽  
High Mobility ◽  
Ag Nanowires ◽  
P Type ◽  
Ag Nanowire

High mobility and p-type thin film transistors (TFTs) are in urgent need for high-speed electronic devices.

scholarly journals Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

2018 ◽  
Vol 20 (26) ◽  
pp. 17889-17898 ◽  
Author(s):  
Marta Reig ◽  
Gintautas Bagdziunas ◽  
Arunas Ramanavicius ◽  
Joaquim Puigdollers ◽  
Dolores Velasco
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
State Organization ◽  
P Type

Role of the solid-state organization of the semiconductor and of its interface with the dielectric on the OTFT performance.

Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors

2013 ◽  
Vol 102 (8) ◽  
pp. 082103 ◽  
Author(s):  
Chan-Yong Jeong ◽  
Joonsung Sohn ◽  
Sang-Hun Song ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Transport Mechanism ◽  
Charge Transport Mechanism ◽  
Cu2o Thin Film ◽  
P Type

Role of SiOxNy surface passivation layer on stability improvement and kink effect reduction of ELA poly silicon thin film transistors

2016 ◽  
Vol 164 ◽  
pp. 14-19 ◽  
Author(s):  
Thanh Thuy Trinh ◽  
Kyungsoo Jang ◽  
Van Duy Nguyen ◽  
Vinh Ai Dao ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Passivation Layer ◽  
Silicon Thin Film ◽  
Poly Silicon ◽  
Kink Effect

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance
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