Benchmarking and Qualification of Gate Drivers for Medium Voltage (MV) Operation using 10 kV Silicon Carbide (SiC) MOSFETs

2019 ◽  
Author(s):  
Anup Anurag ◽  
Sayan Acharya ◽  
Ghanshyamsinh Gohil ◽  
Subhashish Bhattacharya
Keyword(s):  
Silicon Carbide ◽  
Medium Voltage ◽  
Gate Drivers

scholarly journals Optimized Design of Multi-MHz Frequency Isolated Auxiliary Power Supply for Gate Drivers in Medium-Voltage Converters

2020 ◽  
Vol 35 (9) ◽  
pp. 9494-9509 ◽  
Author(s):  
Ole Christian Spro ◽  
Pierre Lefranc ◽  
Sanghyeon Park ◽  
Juan M. Rivas-Davila ◽  
Dimosthenis Peftitsis ◽  
...  
Keyword(s):  
Power Supply ◽  
Optimized Design ◽  
Medium Voltage ◽  
Auxiliary Power ◽  
Gate Drivers

Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems

2016 ◽  
Vol 858 ◽  
pp. 970-973 ◽  
Author(s):  
Vipindas Pala ◽  
Edward van Brunt ◽  
Brett A. Hull ◽  
Scott Allen ◽  
John W. Palmour
Keyword(s):  
Silicon Carbide ◽  
Power Density ◽  
High Power ◽  
Medium Voltage ◽  
In Series ◽  
And Performance ◽  
System Power

Due to their low switching energies, knee-less forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage topologies. This paper demonstrates how SiC MOSFETs can be effectively combined in series and parallel to maximize the system power density and performance.

scholarly journals Silicon carbide planar junctionless transistor for low-medium voltage power electronics

2021 ◽  
Vol 5 (2) ◽  
pp. 025009
Author(s):  
Suvendu Nayak ◽  
Boddepalli SanthiBhushan ◽  
Saurabh Lodha ◽  
Swaroop Ganguly
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Medium Voltage ◽  
Junctionless Transistor

scholarly journals A Single Channel IGBT Gate Drivers for Medium Voltage Converters

2021 ◽  
Vol 9 (1) ◽  
pp. 16
Author(s):  
Sokchea Am ◽  
Phok Chrin ◽  
Bunthern Kim ◽  
Lim Phing
Keyword(s):  
Single Channel ◽  
Medium Voltage ◽  
Gate Drivers

Regional Manufacturing Cost Structures and Supply Chain Considerations for Medium Voltage Silicon Carbide Power Applications

2018 ◽  
Author(s):  
Samantha Reese ◽  
Margaret Mann ◽  
Timothy Remo ◽  
Kelsey Horowitz
Keyword(s):  
Silicon Carbide ◽  
Supply Chain ◽  
Cost Analysis ◽  
Early Stage ◽  
Manufacturing Cost ◽  
Ongoing Research ◽  
Medium Voltage ◽  
Cost Structures ◽  
The Cost ◽  
Supply Chain Analysis

Bottoms-up cost analysis has been a mainstay of commoditized industry and manufacturing processes for years, however a holistic objective supply chain analysis to inform research and investment in the development of early stage technologies has not. The potential for rapid adoption of wide bandgap (WBG) semiconductors, specifically silicon carbide (SiC), highlights a need to understand the drivers of location-specific manufacturing cost, global supply chains, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform the roadmap of SiC technologies. In collaboration with PowerAmerica the project explores the bottoms-up cost analysis of wafers, devices, modules, and variable frequency motor drives at the anticipated manufacturing levels. Leveraging these models, it outlines how the cost reduction potential of proposed research advances can be quantified.

scholarly journals Analysis of cascaded silicon carbide MOSFETs using a single gate driver for medium voltage applications

2020 ◽  
Vol 13 (3) ◽  
pp. 413-419 ◽  
Author(s):  
Asger Bjørn Jørgensen ◽  
Simon Heindorf Sønderskov ◽  
Szymon Beczkowski ◽  
Benoît Bidoggia ◽  
Stig Munk‐Nielsen
Keyword(s):  
Silicon Carbide ◽  
Medium Voltage ◽  
Gate Driver
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