scholarly journals A Single Channel IGBT Gate Drivers for Medium Voltage Converters

2021 ◽  
Vol 9 (1) ◽  
pp. 16
Author(s):  
Sokchea Am ◽  
Phok Chrin ◽  
Bunthern Kim ◽  
Lim Phing
Keyword(s):  
Single Channel ◽  
Medium Voltage ◽  
Gate Drivers

scholarly journals Optimized Design of Multi-MHz Frequency Isolated Auxiliary Power Supply for Gate Drivers in Medium-Voltage Converters

2020 ◽  
Vol 35 (9) ◽  
pp. 9494-9509 ◽  
Author(s):  
Ole Christian Spro ◽  
Pierre Lefranc ◽  
Sanghyeon Park ◽  
Juan M. Rivas-Davila ◽  
Dimosthenis Peftitsis ◽  
...  
Keyword(s):  
Power Supply ◽  
Optimized Design ◽  
Medium Voltage ◽  
Auxiliary Power ◽  
Gate Drivers

Isolation design considerations for power supply of medium voltage silicon carbide gate drivers

2017 ◽  
Author(s):  
Tushar Batra ◽  
Ghanshyam Gohil ◽  
Arun Kumar Sesham ◽  
Nicholas Rodriguez ◽  
Subhashish Bhattacharya
Keyword(s):  
Silicon Carbide ◽  
Power Supply ◽  
Medium Voltage ◽  
Design Considerations ◽  
Gate Drivers

Gate Drivers for Medium-Voltage SiC Devices

2021 ◽  
Vol 2 (1) ◽  
pp. 1-12
Author(s):  
Anup Anurag ◽  
Sayan Acharya ◽  
Nithin Kolli ◽  
Subhashish Bhattacharya
Keyword(s):  
Medium Voltage ◽  
Gate Drivers

Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

2017 ◽  
Vol 10 (15) ◽  
pp. 2143-2148 ◽  
Author(s):  
Benoit Sarrazin ◽  
Rachelle Hanna ◽  
Pierre Lefranc ◽  
Sokchea Am ◽  
Florian Dumas ◽  
...  
Keyword(s):  
Direct Current ◽  
Power Supply ◽  
Medium Voltage ◽  
Gate Drivers

Data Acquisition and Handling Unit for a Quantitative Use of Electron Energy Loss Spectroscopy

1977 ◽  
Vol 35 ◽  
pp. 232-233 ◽  
Author(s):  
P. Trebbia ◽  
P. Ballongue ◽  
C. Colliex
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Single Channel ◽  
Detection System ◽  
Surface Barrier ◽  
Solid State Detector ◽  
Electrostatic Mirror ◽  
Electron Energy Loss

An effective use of electron energy loss spectroscopy for chemical characterization of selected areas in the electron microscope can only be achieved with the development of quantitative measurements capabilities.The experimental assembly, which is sketched in Fig.l, has therefore been carried out. It comprises four main elements.The analytical transmission electron microscope is a conventional microscope fitted with a Castaing and Henry dispersive unit (magnetic prism and electrostatic mirror). Recent modifications include the improvement of the vacuum in the specimen chamber (below 10-6 torr) and the adaptation of a new electrostatic mirror.The detection system, similar to the one described by Hermann et al (1), is located in a separate chamber below the fluorescent screen which visualizes the energy loss spectrum. Variable apertures select the electrons, which have lost an energy AE within an energy window smaller than 1 eV, in front of a surface barrier solid state detector RTC BPY 52 100 S.Q. The saw tooth signal delivered by a charge sensitive preamplifier (decay time of 5.10-5 S) is amplified, shaped into a gaussian profile through an active filter and counted by a single channel analyser.

Prospects for convergent beam electron diffraction with a 200kV cold field-emission transmission electron microscope

1991 ◽  
Vol 49 ◽  
pp. 466-467
Author(s):  
J W Steeds ◽  
R Vincent
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Small Diameter ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Medium Voltage ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Special Modification ◽  
Convergent Beam

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

Instrumentation for Measurement of Lingual Strength

1968 ◽  
Vol 11 (1) ◽  
pp. 189-193 ◽  
Author(s):  
Lois Joan Sanders
Keyword(s):  
Single Channel ◽  
Displacement Transducer ◽  
Tongue Pressure ◽  
Maximum Pressure ◽  
Research Use ◽  
Direct Writing ◽  
Significant Difference ◽  
Pressure Unit ◽  
Force Displacement ◽  
Consistent Response

A tongue pressure unit for measurement of lingual strength and patterns of tongue pressure is described. It consists of a force displacement transducer, a single channel, direct writing recording system, and a specially designed tongue pressure disk, head stabilizer, and pressure unit holder. Calibration with known weights indicated an essentially linear and consistent response. An evaluation of subject reliability in which 17 young adults were tested on two occasions revealed no significant difference in maximum pressure exerted during the two test trials. Suggestions for clinical and research use of the instrumentation are noted.

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