55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge
2008 ◽
Vol 29
(8)
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pp. 834-837
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2005 ◽
Vol 26
(11)
◽
pp. 781-783
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2009 ◽
Vol 193
◽
pp. 012040
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2014 ◽
Vol 54
(3)
◽
pp. 575-581
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