Study of bulk semi-insulating GaAs radiation detectors: Role of ohmic contact metallization in electrical charge transport and detection performance

Author(s):  
F. Dubecky ◽  
B. Zat'ko ◽  
P. Hubik ◽  
P. Bohacek ◽  
E. Gombia ◽  
...  
1993 ◽  
Vol 300 ◽  
Author(s):  
E. Kamińska ◽  
A. Piotrowska ◽  
E. Mizera ◽  
R. Zarecka ◽  
J. Adamczewska ◽  
...  

ABSTRACTThe reactions between (100) GaAs and Au, Zn, and Au(Zn) ohmic contact metallization have been investigated by the use of transmission electron microscopy and x-ray diffraction. Emphasis is placed on the particular role of Zn during consecutive stages of the formation of an ohmic contact to p-GaAs. The most significant feature of the interaction of Zn with GaAs is the penetration of Zn atoms into the native oxide, which remains at the surface of GaAs after chemical treatment. Moreover, the presence of Zn in Au-based metallization is found to considerably suppress the thermally induced growth of metallization grains, making the microstructure of the contact virtually intact upon annealing at temperatures up to 460°C.


2021 ◽  
Vol 15 (5) ◽  
Author(s):  
J. Pipek ◽  
M. Betušiak ◽  
E. Belas ◽  
R. Grill ◽  
P. Praus ◽  
...  

Langmuir ◽  
2008 ◽  
Vol 24 (5) ◽  
pp. 2219-2223 ◽  
Author(s):  
Yabing Qi ◽  
Imma Ratera ◽  
Jeong Y. Park ◽  
Paul D. Ashby ◽  
Su Ying Quek ◽  
...  

2012 ◽  
Vol 101 (24) ◽  
pp. 243302 ◽  
Author(s):  
Yasuhiro Mashiko ◽  
Dai Taguchi ◽  
Martin Weis ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto

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