Degradation of the low voltage power MOSFET electrical parameters during multipulse UIS test

2012 ◽  
Author(s):  
Juraj Marek ◽  
Daniel Donoval ◽  
Miroslav Petrus ◽  
Oubica Stuchlikova ◽  
Ales Chvala ◽  
...  
Keyword(s):  
Low Voltage ◽  
Electrical Parameters ◽  
Power Mosfet

A Low-Voltage Planar Power MOSFET With a Segmented JFET Region

2009 ◽  
Vol 56 (8) ◽  
pp. 1761-1766 ◽  
Author(s):  
Jacky C. W. Ng ◽  
Johnny K. O. Sin
Keyword(s):  
Low Voltage ◽  
Power Mosfet

A CMOS Compatible Power MOSFET for Low Voltage GHz Operation

1999 ◽  
Author(s):  
Lars Vestling ◽  
Lars Bengtsson ◽  
Jorgen Olsson
Keyword(s):  
Low Voltage ◽  
Power Mosfet ◽  
Cmos Compatible

Ultra-low Voltage, Self-aligned OTFTs for Frequency Applications

2013 ◽  
Vol 1567 ◽  
Author(s):  
Stefano Lai ◽  
Piero Cosseddu ◽  
Gian Carlo Gazzadi ◽  
Giovanni Martines ◽  
Annalisa Bonfiglio ◽  
...  
Keyword(s):  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Electrical Parameters ◽  
Chemical Treatments ◽  
Novel Technology ◽  
Novel Structure ◽  
Alignment Technique ◽  
Complete Frequency

ABSTRACTA novel structure for Organic Thin-Film Transistor (OTFT) is here presented. The devices are fabricated using a one-mask, photolithographic self-alignment technique which can be performed with standard photoresists and without further chemical treatments. This technique, combined with a novel technology for the realization of low voltage OTFTs, allows a dramatic reduction of the parasitic capacitances thus leading to a remarkable cut-off frequency. In this paper, the main electrical parameters of low voltage, self-aligned devices are reported, and a complete frequency characterization of the devices is given. These characteristics make the reported approach suitable for the development of basic circuitries for frequency applications.

scholarly journals New Niobium Capacitors with Stable Electrical Parameters

2002 ◽  
Vol 25 (2) ◽  
pp. 147-153 ◽  
Author(s):  
H. Zillgen ◽  
M. Stenzel ◽  
W. Lohwasser
Keyword(s):  
Anode Material ◽  
Process Parameters ◽  
Low Voltage ◽  
Electrical Characteristics ◽  
Electrical Parameters ◽  
Electrolytic Capacitors ◽  
Wide Range ◽  
New Generation ◽  
Economical Alternative ◽  
Aluminum Electrolytic Capacitors

The replacement of the anode material in tantalum capacitors by a new generation of high CV niobium powders offers the possibility to get an economical alternative to tantalum for a wide range of applications. Due to the high CV potential of niobium powder there is also an alternative to low voltage aluminum electrolytic capacitors. We developed a new niobium capacitor which shows stable electrical values. By optimizing the structure of the dielectric and the cathodic layers as well as the process parameters we gained a capacitor which can be used up to105 °C. Electrical characteristics and lifetest behavior of niobium capacitors out of 100 k–150 k CV/g powder will be discussed.

scholarly journals The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

2010 ◽  
Vol 57 (7) ◽  
pp. 1651-1658 ◽  
Author(s):  
Olayiwola Alatise ◽  
Ian Kennedy ◽  
George Petkos ◽  
Keith Heppenstall ◽  
Khalid Khan ◽  
...  
Keyword(s):  
Low Voltage ◽  
Electrical Parameters ◽  
The Impact
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