The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems
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81

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Published By IEEE

9781467311984, 9781467311977, 9781467311960

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Interface traps in insulator/AlGaN/GaN heterostructure capacitors

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418555 ◽

2012 ◽

Author(s):

J. Osvald

Keyword(s):

Interface Traps ◽

Gan Heterostructure

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Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418582 ◽

2012 ◽

Author(s):

F. Dubecky ◽

P. Hubik ◽

E. Gombia ◽

D. Kindl ◽

M. Dubecky ◽

...

Keyword(s):

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Fabrication of 250-nm T-gate In52Al48As-In70Ga30As pHEMT using a novel solvent reflow technique at room temperature

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418547 ◽

2012 ◽

Author(s):

Ka Wa Ian ◽

Michael Exarchos ◽

Mohamed Missous

Keyword(s):

Room Temperature

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Degradation of the low voltage power MOSFET electrical parameters during multipulse UIS test

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418572 ◽

2012 ◽

Author(s):

Juraj Marek ◽

Daniel Donoval ◽

Miroslav Petrus ◽

Oubica Stuchlikova ◽

Ales Chvala ◽

...

Keyword(s):

Low Voltage ◽

Electrical Parameters ◽

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Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418560 ◽

2012 ◽

Author(s):

R. Stoklas ◽

D. Gregusova ◽

J. Novak ◽

P. Kordos ◽

M. Tajima ◽

...

Keyword(s):

Atomic Layer ◽

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Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418532 ◽

2012 ◽

Author(s):

Wojciech Macherzynski ◽

Bogdan Paszkiewicz

Keyword(s):

Ohmic Contact ◽

Diffusion Barriers

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Conductive metal oxide based gates for self-aligned technology of AlGaN/GaN HEMTs

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418564 ◽

2012 ◽

Author(s):

G. Vanko ◽

M. Vallo ◽

I. Ryger ◽

J. Dzuba ◽

T. Lalinsky

Keyword(s):

Metal Oxide ◽

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Photocurrents in double-layer organic field-effect transistors

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418514 ◽

2012 ◽

Author(s):

J. Jakabovic ◽

M. Weis ◽

J. Kovac ◽

D. Donoval ◽

M. Donoval ◽

...

Keyword(s):

Double Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

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Detection elements for on-cantilever laboratory

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418549 ◽

2012 ◽

Author(s):

T. Scepka ◽

D. Gregusova ◽

S. Gazi ◽

S. Hascik ◽

J. Fedor ◽

...

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Characteristics of GaN MOSFET with stacked gate dielectric of MgO and TiO2

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418530 ◽

2012 ◽

Author(s):

G. Dutta

Keyword(s):

Gate Dielectric

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