Critical electron-hole processes in dielectric induced by synchronous action of high electric field and high-current-density electron beam

Author(s):  
D.I. Vaisburd
Author(s):  
Anand Abhishek ◽  
Niraj Kumar ◽  
Udit Narayan Pal ◽  
Bhim Singh ◽  
S. A. Akbar

Author(s):  
Alan M. Cook ◽  
Edward L. Wright ◽  
Khanh T. Nguyen ◽  
Colin D. Joye ◽  
John C. Rodgers ◽  
...  

1964 ◽  
Vol 52 (1) ◽  
pp. 82-83 ◽  
Author(s):  
L. Kikushima ◽  
C.C. Johnson

Author(s):  
Ibrahim A. Metwally ◽  
Md Abdus Salam ◽  
Ali Al-Maqrashi ◽  
Saif AR Sumry ◽  
Saif SH Al-Harthy

Electrostatic and electrodynamic field analyses of 33kV line insulators were introduced to compare the electric-field and the current density profiles of commonly used line insulators in Oman; namely, silicone rubber (SiR) and porcelain line post insulators, and porcelain cap and pin insulator string. SLIM software package was used for such simulation, which is a fully integrated collection of software modules that provides facilities for the generation and solution of electromagnetic finite element models. The simulation results reveal that for the electrostatic simulation under pollution conditions, SiR and porcelain line-post insulators give maximum values of the electric field of 360kV/m and 1700kV/m, respectively. The latter value exceeds the recommended electric field level of 500kV/m. For the electrodynamic simulation under pollution conditions, the electric field and the current density are much higher for porcelain insulator compared to those of SiR insulator. The simulation of four cap-pin standard insulator string reveals that there is high electric field (1250kV/m) at the cap-insulator gap which can cause high current density for polluted case. Finally, the trend of the simulation results has been verified by experimental tests, which has been conducted on different 33kV line insulators having different designs and materials.


1997 ◽  
Vol 473 ◽  
Author(s):  
S. Shingubara ◽  
S. Kajiwara ◽  
T. Osaka ◽  
H. Sakaue ◽  
T. Takahagi

ABSTRACTFormation and morphological change of voids induced by electromigration in polycrystalline Cu interconnects on TiN have been investigated at various current density conditions at elevated temperatures. At first voids were formed at grain boundaries, then they grew further to elongate in the electric field direction. Void elongation parameter (a ratio of void diameters in longitudinal to lateral directions to the electric field) was 2.53 when the current density was 9×106A/cm2, while it was 1.31 when the current density was 3×106A/cm2at 400°C, 50h. Occurrence of void elongation is enhanced with increase in current density, and its relationship to grain boundaries are discussed by FIB-SIM image analysis.


1995 ◽  
Vol 45 (6) ◽  
pp. 1063-1066 ◽  
Author(s):  
E.I. Baranchicov ◽  
G.S. Belenky ◽  
M.A. Deminsky ◽  
V.P. Denisenko ◽  
D.D. Maslenicov ◽  
...  

Author(s):  
E. I. Baranchicov ◽  
G. S. Belenky ◽  
M. A. Deminsky ◽  
V. P. Denisenko ◽  
D. D. Maslenicov ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document