Effect of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors with low residual voltage

2010 ◽  
Author(s):  
Wangcheng Long ◽  
Jinliang He ◽  
Jun Hu ◽  
Jun Liu
Keyword(s):  
Electrical Characteristics ◽  
Residual Voltage ◽  
Zno Varistors ◽  
Doped Zno

The Effects of Cu Dopant on the Microstructure and Non-Ohmic Electrical Properties of ZnO Varistors

2011 ◽  
Vol 343-344 ◽  
pp. 160-165 ◽  
Author(s):  
Ji Wei Fan ◽  
Xiao Peng Li ◽  
Zhen Guo Zhang ◽  
Zhi Qiang Jiao ◽  
Xiang Yang Liu ◽  
...  
Keyword(s):  
Electrical Property ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Growth ◽  
Electrical Characteristics ◽  
Doping Effects ◽  
Zno Varistors ◽  
Doped Zno ◽  
Cu Dopant ◽  
Good Agreement

The doping effects of Cu on the microstructure and non-ohmic electrical properties of ZnO varistors were studied. Addition of Cu2O can enhance the ZnO grain growth during sintering. The SEM and EDS results revealed that the added Cu mainly distributed in the grain boundary and spinel phases of ZnO varistors. The Cu2O addition increased the both of grain and grain boundary resistances. However it decreased the non-ohmic electrical characteristics of ZnO varistors, which is a good agreement with similar findings on Ag2O additions, but contrasts to the reports of good non-ohmic electrical property which found on binary Cu doped ZnO varistors.

Effects of cobalt doping on the electrical characteristics of Al-doped ZnO varistors

2010 ◽  
Vol 64 (9) ◽  
pp. 1081-1084 ◽  
Author(s):  
Wangcheng Long ◽  
Jun Hu ◽  
Jun Liu ◽  
Jinliang He
Keyword(s):  
Electrical Characteristics ◽  
Cobalt Doping ◽  
Zno Varistors ◽  
Doped Zno

Analysis of Grain-Boundary in SrCoO3–Doped ZnO Varistors and its Electrical Characteristics

2013 ◽  
Vol 582 ◽  
pp. 181-184 ◽  
Author(s):  
Eiichi Koga ◽  
Masayuki Hogiri ◽  
Yoshiko Higashi
Keyword(s):  
Grain Boundary ◽  
Schottky Barrier ◽  
Boundary Region ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Hetero Structure ◽  
Characteristic Behavior ◽  
Zno Varistors ◽  
Doped Zno ◽  
Barrier Model

The grain-boundary and its electrical characteristics in SrCoO3doped ZnO varistors were studied. The grain-boundary around ZnO-grain is probably composed of SrCoO3, and its electrical behavior is clearly different from two conventional types of Bi-and Pr-based ZnO varitors. The non-linearity and characteristic behavior could be explained by considering the n-p-n hetero-structure at the grain boundary. SrCoO3 in the grain-boundary region should play crucial roles of not only the appearance of non-liner property but also the formation of different hetero-structure from double Schottky-barrier model on conventional varistors.

Effects of manganese dioxide additives on the electrical characteristics of Al-doped ZnO varistors

2011 ◽  
Vol 54 (8) ◽  
pp. 2204-2208 ◽  
Author(s):  
WangCheng Long ◽  
Jun Hu ◽  
JinLiang He ◽  
Jun Liu ◽  
Rong Zeng
Keyword(s):  
Manganese Dioxide ◽  
Electrical Characteristics ◽  
Zno Varistors ◽  
Doped Zno

Effect of K2O on the sintered microstructure of praseodymium-doped ZnO varistors

1989 ◽  
Vol 8 (8) ◽  
pp. 974-976 ◽  
Author(s):  
H. K. Varma ◽  
K. P. Kumar ◽  
K. G. K. Warrier ◽  
A. D. Damodaran
Keyword(s):  
Zno Varistors ◽  
Doped Zno

Effect of Simultaneous Addition of Zr and Y on Electrical Characteristics of ZnO Varistors

2011 ◽  
Vol 485 ◽  
pp. 257-260 ◽  
Author(s):  
Takayuki Watanabe ◽  
Ai Fukumori ◽  
Yuji Akiyamna ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Leakage Current ◽  
Nonlinear Coefficient ◽  
The Other ◽  
Electrical Characteristics ◽  
Simultaneous Addition ◽  
Zno Varistor ◽  
Low Leakage ◽  
Electrical Degradation ◽  
Low Leakage Current ◽  
Zno Varistors

The effect of simultaneously adding Zr and Y to Bi–Mn–Co–Sb–Si–Cr–Ni-added ZnO varistors (having the same composition as a commercial varistor) on the varistor voltage, leakage current, and resistance to electrical degradation were investigated. Varistor voltage increased with increasing amount of Y for addition of 0–2 mol % Zr. On the other hand, the nonlinear coefficient α prior to electrical degradation changed very little on the addition of both Y and Zr. With the addition of approximately 1 mol% Zr, the leakage current decreased with increasing amount of Y added. A ZnO varistor with a varistor voltage of approximately 600 V/m, a low leakage current, and excellent resistance to electrical degradation was fabricated by adding approximately 2 mol% Y and approximately 1 mol% Zr.

Structural and electronic characteristics of pure and doped ZnO varistors

2012 ◽  
Vol 21 (11) ◽  
pp. 116103 ◽  
Author(s):  
A. Sedky ◽  
E. El-Suheel
Keyword(s):  
Zno Varistors ◽  
Doped Zno
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