scholarly journals La2O3Addition Influence on Electrical Characteristics of Pr6O11-based ZnO Varistors

2006 ◽  
Vol 7 (3) ◽  
pp. 123-128
Author(s):  
Choon-Woo Nahm
2011 ◽  
Vol 485 ◽  
pp. 257-260 ◽  
Author(s):  
Takayuki Watanabe ◽  
Ai Fukumori ◽  
Yuji Akiyamna ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

The effect of simultaneously adding Zr and Y to Bi–Mn–Co–Sb–Si–Cr–Ni-added ZnO varistors (having the same composition as a commercial varistor) on the varistor voltage, leakage current, and resistance to electrical degradation were investigated. Varistor voltage increased with increasing amount of Y for addition of 0–2 mol % Zr. On the other hand, the nonlinear coefficient α prior to electrical degradation changed very little on the addition of both Y and Zr. With the addition of approximately 1 mol% Zr, the leakage current decreased with increasing amount of Y added. A ZnO varistor with a varistor voltage of approximately 600 V/m, a low leakage current, and excellent resistance to electrical degradation was fabricated by adding approximately 2 mol% Y and approximately 1 mol% Zr.


2011 ◽  
Vol 343-344 ◽  
pp. 160-165 ◽  
Author(s):  
Ji Wei Fan ◽  
Xiao Peng Li ◽  
Zhen Guo Zhang ◽  
Zhi Qiang Jiao ◽  
Xiang Yang Liu ◽  
...  

The doping effects of Cu on the microstructure and non-ohmic electrical properties of ZnO varistors were studied. Addition of Cu2O can enhance the ZnO grain growth during sintering. The SEM and EDS results revealed that the added Cu mainly distributed in the grain boundary and spinel phases of ZnO varistors. The Cu2O addition increased the both of grain and grain boundary resistances. However it decreased the non-ohmic electrical characteristics of ZnO varistors, which is a good agreement with similar findings on Ag2O additions, but contrasts to the reports of good non-ohmic electrical property which found on binary Cu doped ZnO varistors.


2010 ◽  
Vol 64 (9) ◽  
pp. 1081-1084 ◽  
Author(s):  
Wangcheng Long ◽  
Jun Hu ◽  
Jun Liu ◽  
Jinliang He

2013 ◽  
Vol 582 ◽  
pp. 181-184 ◽  
Author(s):  
Eiichi Koga ◽  
Masayuki Hogiri ◽  
Yoshiko Higashi

The grain-boundary and its electrical characteristics in SrCoO3doped ZnO varistors were studied. The grain-boundary around ZnO-grain is probably composed of SrCoO3, and its electrical behavior is clearly different from two conventional types of Bi-and Pr-based ZnO varitors. The non-linearity and characteristic behavior could be explained by considering the n-p-n hetero-structure at the grain boundary. SrCoO3 in the grain-boundary region should play crucial roles of not only the appearance of non-liner property but also the formation of different hetero-structure from double Schottky-barrier model on conventional varistors.


2016 ◽  
Vol 19 (4) ◽  
pp. 1600677 ◽  
Author(s):  
Nadine Raidl ◽  
Michael Hofstätter ◽  
Peter Supancic

2013 ◽  
Vol 566 ◽  
pp. 219-222 ◽  
Author(s):  
Atsuko Kubota ◽  
Ai Fukumori ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

With the goal of fabricating varistors with low varistor voltages, we investigated the effects of adding Ba and Si to BiCoMn-added ZnO varistors on the varistor voltage and the resistance to electrical degradation. Ba2Mn3O8, which reduces the resistance to electrical degradation, was not formed at the grain boundary when Si was added. The resistance to electrical degradation was considerably improved by adding 0.10.15 mol% Si relative to samples to which small amounts of Sb had been added. The varistor voltage increased monotonically with increasing amount of added Si; it was approximately 36 V/mm for 0.1 mol% Si.


2011 ◽  
Vol 131 (3) ◽  
pp. 211-218
Author(s):  
Ai Fukumori ◽  
Takayuki Watanabe ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

2011 ◽  
Vol 287-290 ◽  
pp. 486-489 ◽  
Author(s):  
Ji Wei Fan ◽  
Zhen Guo Zhang ◽  
Xiao Peng Li ◽  
Xiang Yang Liu ◽  
Tian Li

Bi2O3 is an important additive in the composition of ZnO varistors. However, the effect of Bi2O3 on novel SnO2 based varistors is still unclear. This paper reports the nonlinear electrical characteristics of (98.95-x)mol%SnO2-0.5mol%CoO-0.05mol%Nb2O5- xmol% Bi2O3 (x = 0, 0.05, 0.1, 0.5 mol%) system, and the influence of sintering temperature is also investigated. The addition of Bi2O3 can improve the electrical nonlinearity of SnO2-CoO-Ta2O5 based varistors, this may be due to the higher barrier height and barrier voltage. The optimum Bi2O3 doping level is between 0.1-0.5mol% and the optimum sintering temperature is 1350°C.


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