Micromachined resonant cavity light emitter with low temperature dependence of emission wavelength

2004 ◽  
Author(s):  
T. Amano ◽  
F. Koyama ◽  
M. Arai ◽  
A. Mastutani
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Resonant Cavity ◽  
Emission Wavelength ◽  
Light Emitter

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

The low temperature dependence of magnetization of as-deposited Fe-Hf-C-N nanocrystalline thin films

1999 ◽  
Vol 12 (5-8) ◽  
pp. 1097-1102 ◽  
Author(s):  
K.S. Kirn ◽  
Y.H. Seong ◽  
S.C. Yu ◽  
S.H. Han ◽  
H.J. Kim
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Nanocrystalline Thin Films

scholarly journals Temperature dependence of the dielectric function and critical points of α-SnS from 27 to 350 K

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hoang Tung Nguyen ◽  
Van Long Le ◽  
Thi Minh Hai Nguyen ◽  
Tae Jung Kim ◽  
Xuan Au Nguyen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Dielectric Function ◽  
Spectral Energy ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Temperature Dependences ◽  
Exciton Effect ◽  
Bose Einstein ◽  
Temperature Gradient Method

Abstract We report the temperature dependence of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of biaxial α-SnS in the spectral energy region from 0.74 to 6.42 eV and temperatures from 27 to 350 K using spectroscopic ellipsometry. Bulk SnS was grown by temperature gradient method. Dielectric response functions were obtained using multilayer calculations to remove artifacts due to surface roughness. We observe sharpening and blue-shifting of CPs with decreasing temperature. A strong exciton effect is detected only in the armchair direction at low temperature. New CPs are observed at low temperature that cannot be detected at room temperature. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose–Einstein statistical factor and the temperature coefficient for describing the electron–phonon interaction.

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