Micromachined GaAs/AlGaAs Resonant-Cavity Light Emitter with Small Temperature Dependence of Emission Wavelength

2003 ◽  
Vol 42 (Part 2, No. 11B) ◽  
pp. L1377-L1379 ◽  
Author(s):  
Takeru Amano ◽  
Fumio Koyama ◽  
Masakazu Arai ◽  
Akihiro Matsutani
Keyword(s):  
Temperature Dependence ◽  
Resonant Cavity ◽  
Emission Wavelength ◽  
Small Temperature ◽  
Light Emitter ◽  
Small Temperature Dependence

scholarly journals Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitrideCu3N

2017 ◽  
Vol 95 (11) ◽  
Author(s):  
Max Birkett ◽  
Christopher N. Savory ◽  
Angela N. Fioretti ◽  
Paul Thompson ◽  
Christopher A. Muryn ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Small Temperature ◽  
Direct Band Gap ◽  
Direct Band ◽  
Small Temperature Dependence

On the perovskite-related materials of high dielectric permittivity with small temperature dependence and low dielectric loss

1997 ◽  
Vol 196 (1) ◽  
pp. 205-209 ◽  
Author(s):  
Tetsur[obar] Nakamura ◽  
Pai-Hsuan Sun ◽  
Yue Jin Shan ◽  
Yoshiyuki Inaguma ◽  
Mitsuru Itoh ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Dielectric Permittivity ◽  
Temperature Dependence ◽  
Small Temperature ◽  
Low Dielectric ◽  
High Dielectric Permittivity ◽  
High Dielectric ◽  
Small Temperature Dependence

scholarly journals Cryogenic operation of NanoBridge at 4K for controlling qubit

2021 ◽  
Author(s):  
Koichiro Okamoto ◽  
Takahisa Tanaka ◽  
Makoto Miyamura ◽  
Hiroki Ishikuro ◽  
Ken Uchida ◽  
...  
Keyword(s):  
Low Power ◽  
Temperature Dependence ◽  
Process Optimization ◽  
Resistive Switching ◽  
Cryogenic Temperature ◽  
Residual Resistivity ◽  
Thermal Engineering ◽  
Small Temperature ◽  
Reset Operation ◽  
Strong Candidate

Abstract A nonvolatile resistive switching of NanoBridgeTM (NB) at 4 K has been demonstrated for realizing the quantum-classical interface (QCI), in which the challenging of reset operation at cryogenic temperature is successfully achieved. The set voltage of the NB is increased with decreasing temperature, saturated around 150 K and to be 2.55 V at 4 K. The on-state resistances tuned at 1k-5kΩ show small temperature dependence down to 4 K due to high residual resistivity. The increased reset current of the NB at 4 K is compensated by the process optimization with thermal engineering and the increased Idsat of the select transistor at 4 K, resulting in the stable switching. The low-power QCI featuring NBs is a strong candidate for controlling a large number of qubits at cryogenic temperature.

PHOTOCONDUCTIVITY IN CUPROUS OXIDE SINGLE CRYSTALS

1962 ◽  
Vol 40 (12) ◽  
pp. 1703-1713 ◽  
Author(s):  
Emery Fortin ◽  
Frank L. Weichman
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Cuprous Oxide ◽  
Low Temperatures ◽  
Surface Recombination ◽  
High Resistivity ◽  
Material Surface ◽  
Conductivity Measurements ◽  
Small Temperature ◽  
Significant Difference

Measurements were made on both single and multicrystalline samples of Cu2O of high resistivity. Conductivity measurements gave three activation energies, 1.0, 0.5, and 0.027 ev, for different temperature regions. The photoconductivity at constant temperatures as a function of wavelength as well as the photoconductivity as a function of temperature at constant wavelengths were measured. Over the temperature range investigated no significant difference was found between single and multicrystalline material. Surface recombination states are postulated to explain the very small temperature dependence at low temperatures.

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