High temperature AlGaN/GaN HFET microwave characterization and modeling

2013 ◽  
Author(s):  
M. Tomaska
Keyword(s):  
High Temperature ◽  
Microwave Characterization ◽  
Gan Hfet

Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

2009 ◽  
Vol 1202 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Yuki Niiyama ◽  
Takehiko Nomura ◽  
Masayuki Iwami ◽  
yoshihiro Satoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Silicon Substrates ◽  
Enhancement Mode ◽  
Threshold Voltages ◽  
Source Voltage ◽  
Gan Hfet ◽  
Output Characteristics ◽  
High Temperature Operation ◽  
State Resistance

AbstractWe have demonstrated enhancement-mode n-channel gallium nitride (GaN) MOSFETs on Si (111) substrates with high-temperature operation up to 300 °C. The GaN MOSFETs have good normally-off operation with the threshold voltages of +2.7 V. The MOSFET exhibits good output characteristics from room temperature to 300 °C. The leakage current at 300°C is less than 100 pA/mm at the drain-to-source voltage of 0.1 V. The on-state resistance of MOSFET at 300°C is about 1.5 times as high as that at room temperature. These results indicate that GaN MOSFET is suitable for high-temperature operation compared with AlGaN/GaN HFET.

scholarly journals Microwave Characterization of High-Temperature Superconductors

1990 ◽  
Author(s):  
D. W. Cooke ◽  
E. R. Gray ◽  
P. N. Arendt ◽  
J. G. Beery ◽  
B. L. Bennett ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors ◽  
Microwave Characterization

High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

2006 ◽  
Vol 53 (12) ◽  
pp. 2908-2913 ◽  
Author(s):  
Takehiko Nomura ◽  
Hiroshi Kambayashi ◽  
Mitsuru Masuda ◽  
Sonomi Ishii ◽  
Nariaki Ikeda ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Fast Switching ◽  
High Breakdown Voltage ◽  
Gan Hfet ◽  
High Temperature Operation ◽  
State Resistance

High Temperature Broadband Dielectric Properties Measurement Techniques

1992 ◽  
Vol 269 ◽  
Author(s):  
Octavio M. Andrade ◽  
Magdy F. Iskander ◽  
Shane Bringhurst
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Measurement Techniques ◽  
Frequency Range ◽  
University Of Utah ◽  
Microwave Characterization ◽  
Characterization Of Materials ◽  
The University

ABSTRACTThis paper discusses theoretical and practical aspects of the development and implementation of various measurement techniques for high-temperature broadband microwave characterization of materials at the University of Utah. Objectives include materials measurements in the frequency range from 45 MHz to 12 GHz and for temperatures as high as 1000°C.

High-Temperature Microwave Characterization of Dielectric Rods

1984 ◽  
Vol 32 (10) ◽  
pp. 1328-1335 ◽  
Author(s):  
J.C. Araneta ◽  
M.E. Brodwin ◽  
G.A. Kriegsmann
Keyword(s):  
High Temperature ◽  
Microwave Characterization

Microwave characterization of high-temperature superconducting thin films using stripline resonators

1990 ◽  
Vol 3 (6) ◽  
pp. 221-224 ◽  
Author(s):  
Alan D. Macdonald ◽  
Stuart A. Long ◽  
Jeffery T. Williams ◽  
David R. Jackson ◽  
Christopher L. Lichtenberg ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Superconducting Thin Films ◽  
High Temperature Superconducting ◽  
Microwave Characterization
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