Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

AbstractWe have demonstrated enhancement-mode n-channel gallium nitride (GaN) MOSFETs on Si (111) substrates with high-temperature operation up to 300 °C. The GaN MOSFETs have good normally-off operation with the threshold voltages of +2.7 V. The MOSFET exhibits good output characteristics from room temperature to 300 °C. The leakage current at 300°C is less than 100 pA/mm at the drain-to-source voltage of 0.1 V. The on-state resistance of MOSFET at 300°C is about 1.5 times as high as that at room temperature. These results indicate that GaN MOSFET is suitable for high-temperature operation compared with AlGaN/GaN HFET.

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High Temperature Operation AlGaN/GaN HFET with a low on-state resistance, a high breakdown voltage and a fast switching capacity

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666134 ◽

2006 ◽

Cited By ~ 9

Author(s):

T. Nomura ◽

H. Kambayashi ◽

M. Masuda ◽

S. Ishii ◽

N. Ikeda ◽

...

Keyword(s):

High Temperature ◽

Breakdown Voltage ◽

Fast Switching ◽

High Breakdown Voltage ◽

Gan Hfet ◽

High Temperature Operation ◽

State Resistance

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Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.715 ◽

2009 ◽

Vol 615-617 ◽

pp. 715-718 ◽

Cited By ~ 7

Author(s):

Andrew Ritenour ◽

Volodymyr Bondarenko ◽

Robin L. Kelley ◽

David C. Sheridan

Keyword(s):

High Temperature ◽

Elevated Temperature ◽

Threshold Voltage ◽

Room Temperature ◽

Electrical Characterization ◽

Saturation Current ◽

Large Area ◽

Enhancement Mode ◽

High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

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High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.885532 ◽

2006 ◽

Vol 53 (12) ◽

pp. 2908-2913 ◽

Cited By ~ 23

Author(s):

Takehiko Nomura ◽

Hiroshi Kambayashi ◽

Mitsuru Masuda ◽

Sonomi Ishii ◽

Nariaki Ikeda ◽

...

Keyword(s):

High Temperature ◽

Breakdown Voltage ◽

Fast Switching ◽

High Breakdown Voltage ◽

Gan Hfet ◽

High Temperature Operation ◽

State Resistance

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1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.903 ◽

2014 ◽

Vol 778-780 ◽

pp. 903-906 ◽

Cited By ~ 13

Author(s):

Kevin Matocha ◽

Kiran Chatty ◽

Sujit Banerjee ◽

Larry B. Rowland

Keyword(s):

High Temperature ◽

Temperature Stress ◽

High Temperatures ◽

Threshold Voltage ◽

Room Temperature ◽

Gate Bias ◽

Threshold Voltage Shift ◽

Device Reliability ◽

Bias Temperature Stress ◽

High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

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Semiconducting polymer blends that exhibit stable charge transport at high temperatures

Science ◽

10.1126/science.aau0759 ◽

2018 ◽

Vol 362 (6419) ◽

pp. 1131-1134 ◽

Cited By ~ 53

Author(s):

Aristide Gumyusenge ◽

Dung T. Tran ◽

Xuyi Luo ◽

Gregory M. Pitch ◽

Yan Zhao ◽

...

Keyword(s):

High Temperature ◽

Polymer Blends ◽

Charge Transport ◽

Organic Semiconductors ◽

Room Temperature ◽

Elevated Temperatures ◽

Hole Mobility ◽

General Strategy ◽

Semiconducting Polymer ◽

High Temperature Operation

Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

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Silicon Carbide Vertical JFET Operating at High Temperature

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1063 ◽

2008 ◽

Vol 600-603 ◽

pp. 1063-1066 ◽

Cited By ~ 3

Author(s):

Konstantin Vassilevski ◽

Keith P. Hilton ◽

Nicolas G. Wright ◽

Michael J. Uren ◽

A.G. Munday ◽

...

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Temperature Dependence ◽

Power Law ◽

Current Density ◽

Electron Mobility ◽

Room Temperature ◽

Protective Atmosphere ◽

State Resistance ◽

A Current

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.

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300C Capable Digital Integrated Circuits in SiC Technology

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.1261 ◽

2012 ◽

Vol 717-720 ◽

pp. 1261-1264 ◽

Cited By ~ 2

Author(s):

Amita Patil ◽

Naresh Rao ◽

Vinayak Tilak

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Elevated Temperature ◽

Integrated Circuits ◽

Room Temperature ◽

Continuous Operation ◽

Shift Register ◽

Digital Integrated Circuits ◽

Enhancement Mode

This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register and ripple counter. All circuits are functional from room temperature up to 300C without any notable degradation in performance at elevated temperature. The 4-bit counter demonstrated stable behavior for over 500 hours of continuous operation at 300C.

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Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation

MRS Proceedings ◽

10.1557/proc-1202-i04-08 ◽

2009 ◽

Vol 1202 ◽

Author(s):

Donat J. As ◽

Elena Tschumak ◽

Florentina Niebelschüetz ◽

W. Jatal ◽

Joerg Pezoldt ◽

...

Keyword(s):

Contact Resistance ◽

Carrier Concentration ◽

Field Effect ◽

Room Temperature ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Gate Length ◽

Dc Characteristics ◽

Threshold Voltages ◽

Source Voltage

AbstractNon-polar cubic AlGaN/GaN HFETs were grown by plasma assisted MBE on 3C-SiC substrates. Both normally-on and normally-off HFETs were fabricated using contact lithography. Our devices have a gate length of 2 μm, a gate width of 25 μm, and source-to-drain spacing of 8 μm. For the source and drain contacts the Al0.36Ga0.64N top layer was removed by reactive ion etching (RIE) with SiCl4 and Ti/Al/Ni/Au ohmic contacts were thermally evaporated. The gate metal was Pd/Ni/Au. At room temperature the DC-characteristics clearly demonstrate enhancement and depletion mode operation with threshold voltages of +0.7 V and −8.0 V, respectively. A transconductance of about 5 mS/mm was measured at a drain source voltage of 10 V for our cubic AlGaN/GaN HFETs, which is comparable to that observed in non-polar a-plane devices. From capacity voltage measurements a 2D carrier concentration of about 7×1012 cm-2 is estimated. The influence of source and drain contact resistance, leakage current through the gate contact and parallel conductivity in the underlaying GaN buffer are discussed.

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High-Temperature Operation of Pentacene Field-Effect Transistors with Polyimide Gate Insulators

MRS Proceedings ◽

10.1557/proc-871-i1.9 ◽

2005 ◽

Vol 871 ◽

Author(s):

Tsuyoshi Sekitani ◽

Shingo Iba ◽

Yusaku Kato ◽

Yoshiaki Noguchi ◽

Takao Someya ◽

...

Keyword(s):

High Temperature ◽

Field Effect ◽

Room Temperature ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Current Ratio ◽

Excellent Thermal Stability ◽

Annealing Temperatures ◽

High Temperature Operation ◽

Thermal Stability Of

AbstractWe have fabricated pentacene field-effect transistors (FETs) on polyimide-sheet films with polyimide gate dielectric layers and parylene encapsulation layer, and investigated the high-temperature performance. It is found that the mobility of encapsulated FETs is enhanced from 0.5 to 0.8 cm2/Vs when the device is heated from room temperature to 160°C under light-shielding nitrogen environment. Furthermore, after the removal of annealing temperatures up to 160°C, the transistor characteristic of mobility and on/off current ratio show no significant changes, demonstration the excellent thermal stability of the present organic FETs.

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A performance comparison of normally-off and normally-on SiC JFETs toward use in high-temperature power modules

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/hiten-paper2-rschrader ◽

2011 ◽

Vol 2011 (HITEN) ◽

pp. 000098-000103

Author(s):

R. Schrader ◽

K. Speer ◽

J. Casady ◽

V. Bondarenko ◽

D. Sheridan

Keyword(s):

High Temperature ◽

Performance Comparison ◽

Design Factor ◽

Fundamental Limitations ◽

Power Modules ◽

Extreme High Temperature ◽

Effect Transistor ◽

High Temperature Operation ◽

State Resistance ◽

Important Design

The high-temperature static and dynamic characteristics of the new 1200 V, 45 mΩ, 9 mm2 depletion-mode SiC vertical trench junction field-effect transistor (vtJFET) are compared with those of a 1200 V, 50 mΩ, 9 mm2 enhancement-mode SiC vtJFET. It is shown that both devices are fully capable of high-temperature operation and that each type has its own unique advantages. For applications operating in extreme high-temperature environments, the larger saturation current (~2.5x) and lower on-state resistance (~150 mΩ at 250 °C) of the depletion-mode SiC vtJFET provide very attractive performance at temperatures beyond silicon's fundamental limitations. In addition, operating the normally-on vtJFET at VGS less than 2 V reduces the gate drive's current requirements to a negligible level, which is an important design factor for high-temperature power modules that use multiple die in parallel.

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