AbstractThe introduction of II-VI semiconductor compounds into porous silicon layers has been investigated in order to obtain transparent and conducting contacts with the inner surface of the material. CdTe and ZnSe have been electrodeposited cathodically on n type nanoporous electrodes from acidic solutions containing the metallic cations and dissolved oxides of selenium or tellurium. CdS incorporation into p-type porous silicon has been achieved by chemical bath deposition, from solutions containing cadmium complexes and thioacetamid as a sulfur donor. Characterization of the deposits has been performed by SEM observations, X-ray analysis and RBS. Results confirm the penetration of the compounds into the porous films, with small to strong concentration gradients in thickness depending on the deposition method. After deposition and sample drying, the luminescence of CdTe embedded layers has almost disappeared, whereas those containing ZnSe and CdS show a photoluminescence efficiency which is not severely degraded.
Investigation on the structural characterization of pulsed p-type porous silicon
