Substrate potential of high-voltage GaN-on-Si HEMTs and half-bridges: Static and dynamic four-terminal characterization and modeling

2017 ◽  
Author(s):  
Stefan Moench ◽  
Cristino Salcines ◽  
Ren Li ◽  
Yajing Li ◽  
Ingmar Kallfass
Keyword(s):  
High Voltage ◽  
Substrate Potential ◽  
Gan On Si

Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

2018 ◽  
Vol 11 (4) ◽  
pp. 681-688 ◽  
Author(s):  
Richard Reiner ◽  
Patrick Waltereit ◽  
Beatrix Weiss ◽  
Stefan Moench ◽  
Matthias Wespel ◽  
...  
Keyword(s):  
High Voltage ◽  
Monolithically Integrated ◽  
Power Circuits ◽  
Gan On Si

Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

2015 ◽  
Vol 111 ◽  
pp. 12-17 ◽  
Author(s):  
Andrzej Taube ◽  
Jakub Kaczmarski ◽  
Renata Kruszka ◽  
Jakub Grochowski ◽  
Kamil Kosiel ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Gan On Si

(Invited) GaN-on-Si For High-Voltage Applications

2019 ◽  
Vol 41 (8) ◽  
pp. 101-112 ◽  
Author(s):  
Domenica Visalli ◽  
Marleen Van Hove ◽  
Puneet Srivastava ◽  
Denis Marcon ◽  
Karen Geens ◽  
...  
Keyword(s):  
High Voltage ◽  
Gan On Si

(Invited) Development of 4 Inch and 6 Inch GaN-on-Si for High-Voltage Operation

2014 ◽  
Vol 61 (4) ◽  
pp. 33-40 ◽  
Author(s):  
C.- F. Lo ◽  
O. Laboutin ◽  
Y. Cao ◽  
K. O'Connor ◽  
D. Hill ◽  
...  
Keyword(s):  
High Voltage ◽  
Gan On Si

High-Voltage and High-Ion/Ioff Quasi-Vertical GaN-on-Si Schottky Barrier Diode with Argon-Implanted Termination

2021 ◽  
pp. 1-1
Author(s):  
Xiaolu Guo ◽  
Yaozong Zhong ◽  
Junlei He ◽  
Yu Zhou ◽  
Shuai Su ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diode ◽  
Gan On Si
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