Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

2015 ◽  
Vol 111 ◽  
pp. 12-17 ◽  
Author(s):  
Andrzej Taube ◽  
Jakub Kaczmarski ◽  
Renata Kruszka ◽  
Jakub Grochowski ◽  
Kamil Kosiel ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Gan On Si

Temperature dependent optical and electrical characterization of SnS/CdS solar cell.

2021 ◽  
pp. 139069
Author(s):  
Taavi Raadik ◽  
Nicolae Spalatu ◽  
Jüri Krustok ◽  
Raavo Josepson ◽  
Maarja Grossberg
Keyword(s):  
Solar Cell ◽  
Electrical Characterization ◽  
Temperature Dependent

Perylene diimide: Synthesis, fabrication and temperature dependent electrical characterization of heterojunction with p-silicon

2013 ◽  
Vol 426 ◽  
pp. 6-12 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Fakhra Aziz ◽  
Muhammad Shahid ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Perylene Diimide ◽  
Temperature Dependent

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

2017 ◽  
Vol 64 (8) ◽  
pp. 3183-3188 ◽  
Author(s):  
Keun Heo ◽  
Kyung-Sang Cho ◽  
Jun Young Choi ◽  
Sangmin Han ◽  
Yun Seop Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Temperature Dependent ◽  
Indium Zinc Oxide

scholarly journals A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

2005 ◽  
Vol 483-485 ◽  
pp. 1005-1008
Author(s):  
Pierre Brosselard ◽  
Thierry Bouchet ◽  
Dominique Planson ◽  
Sigo Scharnholz ◽  
Gontran Pâques ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Electrical Characterization ◽  
Electrical Strength ◽  
Oxide Charge ◽  
Blocking Voltage ◽  
Simulation Based ◽  
Device Structures ◽  
Silicon Silicon

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

Electrical Characterization of High Voltage Polymer Tantalum Capacitors

2012 ◽  
Vol 159 (10) ◽  
pp. A1646-A1651 ◽  
Author(s):  
Y. Freeman ◽  
G. F. Alapatt ◽  
W. R. Harrell ◽  
P. Lessner
Keyword(s):  
High Voltage ◽  
Electrical Characterization

Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction

Optik ◽  
2017 ◽  
Vol 142 ◽  
pp. 644-650 ◽  
Author(s):  
Yusuf Selim Ocak ◽  
Cihat Bozkaplan ◽  
Honar Salah Ahmed ◽  
Ahmet Tombak ◽  
Mustafa Fatih Genisel ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Temperature Dependent

Metal-Ferroelectric-Semiconductor Characteristics of BaMgF4 Films on p-Silicon

1991 ◽  
Vol 230 ◽  
Author(s):  
T. S. Kalkur ◽  
J. R. Kulkarni ◽  
R. Y. Kwor ◽  
L. Levinson ◽  
L. Kammerdiner
Keyword(s):  
Threshold Voltage ◽  
Zirconium Oxide ◽  
Ionic Conduction ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Capping Layer ◽  
Capacitance Voltage ◽  
Ferroelectric Memories ◽  
Non Destructive

AbstractCapacitance-voltage characterstics of BaMgF4 film deposited in an ion-assisted deposition system shows hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. Electrical characterization of the films shows that these films can be used to implement non-destructive read-out non-volatile ferroelectric memories. These films were found to dissolve in water and other aqueous solutions. In order to overcome this problem, a suitable capping layer like zirconium oxide and amorphous silicon was deposited on BMF films. The shift in threshold voltage did not change significantly due to the incorporation of the capping layer. The shift in threshold voltage was found to be temperature dependent and this might be due to ionic conduction in fluorides.

scholarly journals Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology

2018 ◽  
Vol 924 ◽  
pp. 958-961 ◽  
Author(s):  
Muhammad Shakir ◽  
Hossein Elahipanah ◽  
Raheleh Hedayati ◽  
Carl Mikael Zetterling
Keyword(s):  
Elevated Temperature ◽  
Transient Response ◽  
Electrical Characterization ◽  
Nand Gate ◽  
Dynamic Parameters ◽  
Temperature Dependent ◽  
Noise Margin ◽  
Wide Range ◽  
Output Noise

This work presents the design and electrical characterization of in-house-fabricated 2-input NAND gate. The monolithic bipolar 2-input NAND gate employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC and operates over a wide range of temperature and supply voltage.The fabricated circuit was characterized on the wafer by using a hot-chuck probe-station from 25 °C up to 500 °C. The circuit is also characterized over a wide range of voltage supply i.e. 11 to 20 V. The output-noise margin high (NMH) and output-noise margin low (NML) are also measured over a wide range of temperatures and supply voltages using voltage transfer characteristics (VTC). The transient response was measured by applying two square waves of, 5 kHz and 10 kHz. It is demonstrated that the dynamic parameters of the circuit are temperature dependent. The 2-input TTL NAND gate consumes 20 mW at 500 °C and 15 V.

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

2002 ◽  
Vol 389-393 ◽  
pp. 1285-1288 ◽  
Author(s):  
Uwe Zimmermann ◽  
John Österman ◽  
Jie Zhang ◽  
Anne Henry ◽  
Anders Hallén
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Electrical Characterization ◽  
Epitaxial Layers
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