A study of electron transit-time in ballistic diodes using a multi-valley hydrodynamic transport model

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170042 ◽

2002 ◽

Author(s):

D.L. Woolard ◽

R.J. Trew ◽

M.A. Littlejohn ◽

C.T. Kelley

Keyword(s):

Transit Time ◽

Transport Model ◽

Hydrodynamic Transport

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Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034550 ◽

2003 ◽

Author(s):

M. Gritsch ◽

H. Kosina ◽

T. Grasser ◽

S. Selberherr

Keyword(s):

Transport Model ◽

Hydrodynamic Transport

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Measurement of relative blood flow, transit-time distributions and transport-model parameters by residue detection when radiotracer recirculates

Journal of Theoretical Biology ◽

10.1016/0022-5193(72)90088-4 ◽

1972 ◽

Vol 37 (3) ◽

pp. 503-529 ◽

Author(s):

Kenneth B. Larson ◽

Donald L. Snyder

Keyword(s):

Transit Time ◽

Transport Model ◽

Model Parameters ◽

Residue Detection

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An improved hydrodynamic transport model for silicon

IEEE Transactions on Electron Devices ◽

10.1109/16.223707 ◽

1993 ◽

Vol 40 (8) ◽

pp. 1469-1477 ◽

Author(s):

T. Tang ◽

S. Ramaswamy ◽

J. Nam

Keyword(s):

Transport Model ◽

Hydrodynamic Transport

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Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs with a quantum hydrodynamic transport model

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354441 ◽

2004 ◽

Author(s):

J. Hontschel ◽

W. Klix ◽

R. Stenzel

Keyword(s):

Integrated Circuits ◽

Transport Model ◽

Quantum Effects ◽

Monolithic Integrated Circuits ◽

Quantum Hydrodynamic ◽

Hydrodynamic Transport

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Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger Equation with a Hydrodynamic Transport Model

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_48 ◽

2001 ◽

pp. 222-225

Author(s):

J. Höntschel ◽

R. Stenzel ◽

W. Klix ◽

F. Ertl ◽

T. Asperger ◽

...

Keyword(s):

Schrödinger Equation ◽

Schrodinger Equation ◽

Transport Model ◽

Coupled Solution ◽

Hydrodynamic Transport

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Revision of the standard hydrodynamic transport model for SOI simulation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.803645 ◽

2002 ◽

Vol 49 (10) ◽

pp. 1814-1820 ◽

Author(s):

M. Gritsch ◽

H. Kosina ◽

T. Grasser ◽

S. Selberherr

Keyword(s):

Transport Model ◽

Hydrodynamic Transport

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A hydrodynamic transport model and its applications in semiconductor device simulation

Solid-State Electronics ◽

10.1016/0038-1101(93)90215-c ◽

1993 ◽

Vol 36 (12) ◽

pp. 1689-1696 ◽

Author(s):

Yaxi Zhang ◽

M. El Nokali

Keyword(s):

Semiconductor Device ◽

Transport Model ◽

Device Simulation ◽

Semiconductor Device Simulation ◽

Hydrodynamic Transport

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Use of gaseous tracers (CFCs and SF6) and transit-time distribution spectrum to validate a shallow groundwater transport model

Journal of Hydrology ◽

10.1016/j.jhydrol.2012.11.043 ◽

2013 ◽

Vol 480 ◽

pp. 1-9 ◽

Author(s):

Jérôme Molénat ◽

Chantal Gascuel-Odoux ◽

Luc Aquilina ◽

Laurent Ruiz

Keyword(s):

Transit Time ◽

Time Distribution ◽

Transport Model ◽

Shallow Groundwater ◽

Groundwater Transport ◽

Transit Time Distribution

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Development of the Semiconductor Hydrodynamic Transport Model: Review and Recent Progress

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664536 ◽

2005 ◽

Author(s):

Ting-wei Tang

Keyword(s):

Recent Progress ◽

Transport Model ◽

Model Review ◽

Hydrodynamic Transport

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Correct and rigorous single-electron-gas hydrodynamic transport model for multi-valley semiconductors

Solid-State Electronics ◽

10.1016/0038-1101(94)90042-6 ◽

1994 ◽

Vol 37 (9) ◽

pp. 1603-1609 ◽

Author(s):

J. Jyegal ◽

T.A. DeMassa

Keyword(s):

Transport Model ◽

Electron Gas ◽

Single Electron ◽

Hydrodynamic Transport

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