Three-Dimensional Numerical Simulation of Switching Dynamics for Cylindrical-Shaped Phase Change Memory

2008 ◽  
Author(s):  
Yiming Li ◽  
Chih-Hong Hwang ◽  
Yi-Ting Kuo ◽  
Hui-Wen Cheng
Keyword(s):  
Numerical Simulation ◽  
Phase Change ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Switching Dynamics ◽  
Change Memory

Contact size scaling of a W-contact phase-change memory cell based on numerical simulation

2012 ◽  
Vol 33 (10) ◽  
pp. 104006
Author(s):  
Yiqun Wei ◽  
Xinnan Lin ◽  
Yuchao Jia ◽  
Xiaole Cui ◽  
Xing Zhang ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Contact Phase ◽  
Size Scaling ◽  
Contact Size ◽  
Change Memory

Thermal analysis of nonvolatile and non rotation phase change memory cell

2003 ◽  
Vol 803 ◽  
Author(s):  
L. P. Shi ◽  
T. C. Chong ◽  
J. M. Li ◽  
H. X. Yang ◽  
J. Q. Mou
Keyword(s):  
Phase Change ◽  
Electric Pulse ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Flow Characteristics ◽  
Random Access ◽  
Current Density Distribution ◽  
Memory Cell ◽  
Temperature History ◽  
Change Memory

ABSTRACTIn this paper, a three-dimensional finite-element modeling is performed for the analyses of Chalcogenide Random Access Memory (C-RAM), a non-rotation nonvolatile phase change memory cell. The thermal effect generated by an incident electric pulse was mainly discussed. Thermal performances of the cell as a result of electrical and geometrical variations were quantified. Current density distribution, temperature profiles, temperature history, heating rate, cooling rate, and heat flow characteristics were obtained and analyzed. The study is useful for the failure analysis of the C-RAM.

scholarly journals An Improved Electrical Switching and Phase-Transition Model for Scanning Probe Phase-Change Memory

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Lei Wang ◽  
Si-Di Gong ◽  
Jing Wen ◽  
Ci Hui Yang
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Data Storage ◽  
Writing Process ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Scanning Probe ◽  
Three Dimensional Model ◽  
Current Voltage Curve ◽  
Change Memory

Scanning probe phase-change memory (SPPCM) has been widely considered as one of the most promising candidates for next-generation data storage devices due to its fast switching time, low power consumption, and potential for ultra-high density. Development of a comprehensive model able to accurately describe all the physical processes involved in SPPCM operations is therefore vital to provide researchers with an effective route for device optimization. In this paper, we introduce a pseudo-three-dimensional model to simulate the electrothermal and phase-transition phenomena observed during the SPPCM writing process by simultaneously solving Laplace’s equation to model the electrical process, the classical heat transfer equation, and a rate equation to model phase transitions. The crystalline bit region of a typical probe system and the resulting current-voltage curve obtained from simulations of the writing process showed good agreement with experimental results obtained under an equivalent configuration, demonstrating the validity of the proposed model.

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