Mechanism Analysis of Chemical Mechanical Polishing of 4H-SiC Wafer

2020 ◽  
Author(s):  
Gaoyang Zhao ◽  
Aoxue Xu ◽  
Fan Xu ◽  
Daohuan Feng ◽  
WeiliLiu ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Mechanism Analysis ◽  
Sic Wafer

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Chemical Mechanical Polishing of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent

2011 ◽  
Vol 236-238 ◽  
pp. 3020-3023 ◽  
Author(s):  
Yan Gang He ◽  
Xiao Wei Gan ◽  
Wei Hong ◽  
Yi Hu ◽  
Yu Ling Liu
Keyword(s):  
Reaction Mechanism ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Mechanism Analysis ◽  
Slurry Stability ◽  
Cu Cmp ◽  
Better Than

Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity. This requirements are met through the complexing agents. Based on the reaction mechanism analysis of Cu in alkaline slurry with R(NH2)n as complexing agent in CMP, the performance of Cu dishing and erosion were discussed. The results showed that the slurry stability can be improved obviously by the addition of R(NH2)n as complexing agent, both Cu1 and Cu2 have good dishing and erosion performance. Furthermore, the dishing condition of Cu2 (180-230nm) is better than that of Cu1 (280-370nm), and the erosion condition of Cu2 (230-260nm) is also better than that of Cu1 (450-500nm).

Environment-Friendly Chemical Mechanical Polishing Slurry for SiC Wafer

2016 ◽  
Vol 874 ◽  
pp. 415-419
Author(s):  
Ze Wei Yuan ◽  
Yan He ◽  
Quan Wen ◽  
Hai Yang Du
Keyword(s):  
Surface Roughness ◽  
Reaction Mechanism ◽  
Environmental Pollution ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Polishing Process ◽  
Environment Friendly ◽  
High Efficient ◽  
Sic Wafer

In order to avoid the environmental pollution and the harm to body of traditional polishing slurries, an environment-friendly chemical mechanical polishing technology is proposed for SiC wafer in this study. With this method, SiC material is removed by utilizing the strong oxidability of nanotitanium dioxide particles in chemical mechanical slurry in the existence of ultraviolet. While, the oxidbillity will recede in absence of ultraviolet when the polishing process finishes. On the basis of investigating in the reaction mechanism between SiC and nanotitanium dioxide, the slurries are prepared for the environment-friendly chemical mechanical polishing technology. The results show that the ultraviolet-assisted CMP slurry has strong oxidation for SiC material. This method is high-efficient for polishing SiC wafer. The surface roughness is reduced to about Ra 0.1μm from Ra 0.818μm after polishing for one hour.

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