scholarly journals Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator

2015 ◽  
Vol 13 ◽  
pp. 121-125
Author(s):  
A. Fatemi ◽  
H. Gaul ◽  
U. Keil ◽  
H. Klar
Keyword(s):  
Supply Voltage ◽  
Optical Modulator ◽  
Current Application ◽  
Voltage Level ◽  
Electro Optic ◽  
Ring Modulator ◽  
Main Driver ◽  
Driver Circuit ◽  
Voltage Swing ◽  
Application Requirements

Abstract. This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented. This driver IC consists of pre- and main driver stages where a newly modified cascode topology and capacitance degeneration technique is employed to meet current application requirements; high voltage swing at high datarate. The simulation results show a differential output voltage swing of 3.9 Vp-p at 14 Gbps data rate, according to the FDR Infiniband standard.

Dependence of Current Harmonics of Greenhouse Irradiators on Supply Voltage

2020 ◽  
pp. 85-88 ◽  
Author(s):  
Nadezhda P. Kondratieva
Keyword(s):  
Mathematical Models ◽  
Supply Voltage ◽  
Harmonic Distortion ◽  
Feasibility Studies ◽  
Power Losses ◽  
Voltage Level ◽  
Supply Networks ◽  
Current Harmonics ◽  
Cable Lines ◽  
Harmonic Composition

The article describes the results of the study concerning the effect of the voltage level on current harmonic composition in greenhouses irradiators. It is found that its change affects the level of current harmonics of all types of the studied greenhouse irradiators. With decrease of nominal supply voltage by 10 %, the total harmonic distortion THDi decreases by 9 % for emitters equipped with high pressure sodium lamps (HPSL), by 10 % for emitters with electrode-less lamps and by 3 % for LED based emitters. With increase of nominal supply voltage by 10 %, THDi increases by 23 % for lighting devices equipped with HPSL, by 10 % for irradiators with electrode-less lamps and by 3 % for LED based emitters. Therefore, changes of supply voltage cause the least effect on the level of current harmonics of LED based emitters and then the emitters with electrode-less lamps. Change of the level of supply voltage causes the greatest effect on the level of current harmonics of HPSL based irradiators. Mathematical models of dependence of THDi on the level of supply voltage for greenhouse emitters equipped with LED, electrode-less lamps and HPSL lamps were formulated. These mathematical models may be used for calculations of total current when selecting transformers and supply cable lines for greenhouse lighting devices, for design of new or reconstruction of existing irradiation systems of greenhouse facilities, and for calculation of power losses in power supply networks of greenhouse facilities during feasibility studies for energy saving and energy efficiency increasing projects.

A 12-BIT 400-MS/s CURRENT-STEERING DAC WITH DEGLITCHING TECHNIQUE

2014 ◽  
Vol 23 (01) ◽  
pp. 1450004 ◽  
Author(s):  
XIAOBO XUE ◽  
XIAOLEI ZHU ◽  
QIFENG SHI ◽  
LENIAN HE
Keyword(s):  
Dynamic Range ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Signal Frequency ◽  
Current Steering ◽  
Digital To Analog Converter ◽  
Measurement Results ◽  
Voltage Swing ◽  
Current Steering Dac ◽  
Low Supply Voltage

In this paper, a 12-bit current-steering digital-to-analog converter (DAC) employing a deglitching technique is proposed. The deglitching technique is realized by lowering the voltage swing of the control signal as well as by using a method of glitch counteraction (GC). A new switch–driver structure is designed to enable the effectiveness of the GC and provide sufficient driving capability under a low supply voltage. Moreover, the control signal's rise/fall asymmetry which increases the glitch error can be suppressed by using the proposed switch–driver structure. The 12-bit DAC is implemented in 180 nm CMOS technology. The measurement results show that the spurious free dynamic range (SFDR) at low signal frequency is 78.8 dB, and it is higher than 70 dB up to 60 MHz signal frequency at 400 MS/s. The measured INL and DNL are both less than ±0.6 LSB.

A Direct Bulk Coupling PMOS Colpitts QVCO Using Capacitive-Feedback Structure

2019 ◽  
Vol 28 (08) ◽  
pp. 1950125
Author(s):  
Jianqun Ding ◽  
Lijun Huang ◽  
Xianwu Mi ◽  
Dajiang He ◽  
Shenghai Chen ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Figure Of Merit ◽  
Supply Voltage ◽  
Voltage Controlled Oscillator ◽  
Chip Area ◽  
Low Power Dissipation ◽  
Feedback Structure ◽  
Voltage Swing ◽  
Low Supply Voltage ◽  
Capacitive Feedback

In this paper, a full PMOS Colpitts quadrature voltage-controlled oscillator (QVCO) topology, suitable for low supply voltage and low power dissipation, is presented. For an enhanced voltage swing under a low supply voltage, the capacitive-feedback technique is employed. Quadrature coupling is achieved by employing direct bulk coupling technique, leading to reduction in both power and chip area. The proposed QVCO covers a 5% tuning range between 2.325 GHz and 2.435 GHz, and the phase noise is [Formula: see text]128.2 dBc/Hz at 1-MHz offset from the 2.34-GHz carrier while consuming only 0.535 mW from 0.55-V supply voltage, yielding a figure-of-merit (FoM) of 198 dBc/Hz.

Characterization of Bulk BaTiO3 Material for Optical Modulator Applications

2020 ◽  
Vol 1002 ◽  
pp. 132-139
Author(s):  
Sabah Al-Ithawi ◽  
Wasan A. Hekmat ◽  
Kadhim A. Hubeatir ◽  
Shams B. Ali ◽  
Suad M. Kadhim ◽  
...  
Keyword(s):  
Sample Size ◽  
Crystalline Structure ◽  
Figure Of Merit ◽  
Optical Modulator ◽  
Effective Parameters ◽  
Good Efficiency ◽  
Half Wave Voltage ◽  
Half Wave ◽  
Electro Optic

In this work, different sizes of BaTiO3 (BTO) were characterized. The effective parameters were studied to reach optimum performance in order to realize an optical modulator. The parameters such as spectroscopy, electro-optic coefficient, crystalline structure, and birefringence indicated that BaTiO3 has an excellent behavior to manipulate the light by Pockels modulator, spatially in the field of telecom. The sample size (10×3 mm) was shown a good performance compare with other samples, for example, the BTO has low absorption, high variation of output as a function of voltage applied and good efficiency that showed by figure of merit. In addition, a low half-wave voltage (Vπ) was observed.

scholarly journals Channel Length Biasing for Improving Read Margin of the 8T SRAM at Near Threshold Operation

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 611 ◽  
Author(s):  
Ik Joon Chang ◽  
Yesung Kang ◽  
Youngmin Kim
Keyword(s):  
Threshold Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Channel Length ◽  
Voltage Level ◽  
Exact Data ◽  
Optimum Energy ◽  
The Stability ◽  
20 Nm ◽  
Near Threshold

Reducing a supply voltage in order to minimize power consumption in memory is a major design consideration in this field of study. In static random access memory (SRAM), optimum energy can be achieved by reducing the voltage near the threshold voltage level for near threshold voltage computing (NTC). However, lowering the operational voltage drastically degrades the stability of SRAM. Thus, in conventional 6T SRAM, it is almost impossible to read exact data, even when a small process variation occurs. To address this problem, an 8T SRAM structure is proposed which can be widely used for improving the read stability at lower voltage operation. In this paper, we investigate the channel length biasing effect on the read access transistor of the 8T SRAM in NTC and compare this with 6T SRAM. Read stability can be improved by suppressing the leakage current due to the longer channel length. Simulation results show that, in NTC, up to a 12× read-error reduction can be achieved by the 20 nm channel length biasing in the 8T SRAM compared to 6T SRAM.

EXPERIMENTAL STUDIES OF THE HEATING TEMPERATURE OF THE GREENHOUSE RADIATOR INSTALLATIONS

2020 ◽  
Vol 15 (1) ◽  
pp. 76-80
Author(s):  
Nadezhda Kondrat'eva ◽  
Dmitriy Filatov ◽  
Pavel Terent'ev ◽  
Bulat Ziganshin
Keyword(s):  
Energy Efficiency ◽  
Supply Voltage ◽  
Heating Temperature ◽  
Experimental Studies ◽  
Maximum Temperature ◽  
Thermal Imager ◽  
Voltage Level ◽  
Radiation Sources ◽  
Measurement Results ◽  
Nominal Mode

The thermal regime of plants determines the temperature of the environment, the evaporation of moisture by plants, and the heating of plants by radiation from irradiation plants. Today, induction and LED greenhouse irradiators are promising for replacing irradiators with sodium lamps in terms of energy efficiency. Experimental studies were performed to assess the possibility of proximity of irradiators with induction lamps and LED irradiators to plants to increase their level of irradiation, in comparison with sodium radiation sources. When setting up the experiment, a complex was used, including a Fluke ti32 thermal imager, PHO-250-2-M linear autotransformer, 220V power supply, and a greenhouse irradiator. Processing of the measurement results was carried out in the Fluke SmartView 3.1 program. The heating temperature was determined when reaching the nominal mode, with the nominal mode of operation of the irradiators, with a change in the supply voltage level. Sodium and induction irradiators heat up to a maximum temperature 10 times faster than LED ones. The heating temperature of optical radiation sources with sodium lamps is 5 times higher than LED and 2.5 times higher than induction. A change in the supply voltage level affects the heating temperature of the sodium irradiator with electromagnetic ballasts, the heating temperature of sodium and induction irradiators with electronic ballasts, as well as LED irradiators, remains unchanged and equal to the nominal value at a supply voltage level of ± 10% of Unom.. Low heating temperatures of induction and LED irradiators can reduce the height of their suspension and bring them closer to plants, which will increase the irradiation of plants by increasing the level of illumination or reduce the power of irradiators, that is, increase the energy efficiency of irradiation systems

Hybrid silicon-electro-optic-polymer integrated high-performance optical modulator

2014 ◽  
Author(s):  
Xingyu Zhang ◽  
Amir Hosseini ◽  
Jingdong Luo ◽  
Alex K.-Y. Jen ◽  
Ray T. Chen
Keyword(s):  
High Performance ◽  
Optical Modulator ◽  
Electro Optic ◽  
Hybrid Silicon

scholarly journals Design of Low Power and Low Phase Noise Current Starved Ring Oscillator for RFID Tag EEPROM

2019 ◽  
pp. 19-23
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Ring Oscillator ◽  
Cmos Process ◽  
Clock Signal ◽  
Voltage Level ◽  
Rfid Tag ◽  
Low Phase Noise

Power dissipation of CMOS IC is a key factor in low power applications especially in RFID tag memories. Generally, tag memories like electrically erasable programmable read-only memory (EEPROM) require an internal clock generator to regulate the internal voltage level properly. In EEPROM, oscillator circuit can generate any periodic clock signal for frequency translation. Among different types of oscillators, a current starved ring oscillator (CSRO) is described in this research due to its very low current biasing source, which in turn restrict the current flows to reduce the overall power dissipation. The designed CSRO is limited to three stages to reduce the power dissipation to meet the specs. The simulated output shows that, the improved CSRO dissipates only 4.9 mW under the power supply voltage (VDD) 1.2 V in Silterra 130 nm CMOS process. Moreover, this designed oscillator has the lowest phase noise -119.38 dBc/Hz compared to other research works. In addition, the designed CSRO is able to reduce the overall chip area, which is only 0.00114 mm2. Therefore, this proposed low power and low phase noise CSRO will be able to regulate the voltage level successfully for low power RFID tag EEPROM.

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