Evaluation of electrostatic discharge (ESD) characteristics for bottom contact organic thin film transistor

2013 ◽  
Author(s):  
Zhiwei Liu ◽  
Aihua Dong ◽  
Zhuoyu Ji ◽  
Long Wang ◽  
Linfeng He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrostatic Discharge ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Bottom Contact

Characteristics of pentacene organic thin film transistor with top gate and bottom contact

2008 ◽  
Vol 17 (5) ◽  
pp. 1887-1892 ◽  
Author(s):  
Yuan Guang-Cai ◽  
Xu Zheng ◽  
Zhao Su-Ling ◽  
Zhang Fu-Jun ◽  
Jiang Wei-Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Bottom Contact

Electrode Effects of Organic Thin-Film Transistor with Top and Bottom Contact Configuration

2005 ◽  
Vol 44 (6A) ◽  
pp. 3715-3720 ◽  
Author(s):  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
Takehito Kodzasa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Bottom Contact ◽  
Contact Configuration

scholarly journals An Analysis of Aluminium Oxide and Silicon Dioxide as a Dielectric on Nano Structured Bottom Gate Bottom Contact Organic Thin Film Transistor Based Sensor

2020 ◽  
pp. 31-35
Author(s):  
Rajpoot Subhadra
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Gas Sensor ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Bottom Contact ◽  
Bottom Gate

A Nano-structuredflexible bottom gate bottom contact (BGBC) organic thin film transistor based pentacenesensor was utilisedto compare between the two frequently used dielectric material i.ealuminiumoxide (Al2O3) and silicon dioxide (SiO2). The organic sensor served as an excellent gas sensor which was visualised through the simulation result in the form of variation between itsmax. and min. drain current and Ion /Ioffratio. The Ion / Ioffratio in the case ofaluminiumoxidewas found to be greater as compared to silicon dioxide whereas the minimum drain current was greater in the case of silicon dioxide and vice versa for the maximum drain current. On comparing the sensitivity of the device, which is the ratio of difference between min. drain current in the presence of any toxic gas and min. drain current in the absence of air to the min. drain current in the absence of air with respect tothe twodifferent electrodes wasfound to be 0.0314 for aluminiumoxide and 0.02964 for silicon dioxide. Hence, aluminiumoxide taking upper hand in sensitivity

The effect of surface treatment of bottom contact organic thin film transistor

2011 ◽  
Vol 161 (17-18) ◽  
pp. 1953-1957 ◽  
Author(s):  
Jin-Seong Park ◽  
Woo Sik Jeon ◽  
Jung Soo Park ◽  
Jang Hyuk Kwon ◽  
Min Chul Suh
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Bottom Contact ◽  
Effect Of Surface
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