Solution Processed Antimony Sulfide-Selenide [Sb2(S,Se)3] for High Efficiency Solar Cells

Author(s):  
Tao Chen
2016 ◽  
Vol 4 (35) ◽  
pp. 13476-13481 ◽  
Author(s):  
Dandan Zhao ◽  
Qingmiao Fan ◽  
Qingwen Tian ◽  
Zhengji Zhou ◽  
Yuena Meng ◽  
...  

An improved route to fabricate Cu(In,Ga)(S,Se)2 thin films is proposed for obtaining a large-grained layer throughout the films, which greatly facilitates the improvement of the performance of Cu(In,Ga)(S,Se)2 solar cells.


2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer

Solar Energy ◽  
2021 ◽  
Vol 218 ◽  
pp. 142-149
Author(s):  
Shou-En Chiang ◽  
Anjali Chandel ◽  
Diksha Thakur ◽  
Yan-Ta Chen ◽  
Pei-Chen Lin ◽  
...  

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Juanyong Wan ◽  
Yonggao Xia ◽  
Junfeng Fang ◽  
Zhiguo Zhang ◽  
Bingang Xu ◽  
...  

AbstractNonfullerene organic solar cells (OSCs) have achieved breakthrough with pushing the efficiency exceeding 17%. While this shed light on OSC commercialization, high-performance flexible OSCs should be pursued through solution manufacturing. Herein, we report a solution-processed flexible OSC based on a transparent conducting PEDOT:PSS anode doped with trifluoromethanesulfonic acid (CF3SO3H). Through a low-concentration and low-temperature CF3SO3H doping, the conducting polymer anodes exhibited a main sheet resistance of 35 Ω sq−1 (minimum value: 32 Ω sq−1), a raised work function (≈ 5.0 eV), a superior wettability, and a high electrical stability. The high work function minimized the energy level mismatch among the anodes, hole-transporting layers and electron-donors of the active layers, thereby leading to an enhanced carrier extraction. The solution-processed flexible OSCs yielded a record-high efficiency of 16.41% (maximum value: 16.61%). Besides, the flexible OSCs afforded the 1000 cyclic bending tests at the radius of 1.5 mm and the long-time thermal treatments at 85 °C, demonstrating a high flexibility and a good thermal stability.


1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.


2014 ◽  
Vol 116 (19) ◽  
pp. 194504 ◽  
Author(s):  
Matthew P. Lumb ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Robert J. Walters

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