AbstractIntegration of a ferroelectric capacitor module in a standard CMOS process subjects the ferroelectric to various ambients during backend processing, some of which can render the ferroelectric essentially non-operational for NVRAM applications. Post-crystallization processing of sol-gel deposited integrated ferroelectric PZT capacitors in the presence of hydrogen-containing, reducing ambients is observed to degrade the nonvolatile polarization. Low-pressure hydrogen anneals at temperatures as low as 200°C substantially degrade the nonvolatile polarization while the DRAM polarization remains roughly constant. Leakage current drops by one order of magnitude and fatigue is accelerated. A ferroelectric capacitor module can be integrated with minimal degradation with careful modifications in the backend processing.
Development of a Mathematical Model of Electrical Polarization Switching in a Ferroelectric Capacitor
