Growth behavior and mechanism of tin whisker on isolated SnAg solder under compressive stress

In this study, a three-dimensional (3D) nonlinear stress analysis of the tin whisker initiation on a pure matte Sn-plated copper substrate is investigated. The structure is subjected to a compressive stress acting at the Sn layer which is generated by the spontaneous chemical reaction of the Sn layer and the Sn5Cu6 layer. The Sn layer is assumed to be an elasto-plastic material. The results presented herein is useful in understanding why the compressive stress in the Sn layer can initiate a tin whisker near the weak spot of a SnOx layer.

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The influence of non-uniform copper oxide layer on tin whisker growth and tin whisker growth behavior in SnAg microbumps with small diameter

Materials Letters ◽

10.1016/j.matlet.2019.126773 ◽

2020 ◽

Vol 258 ◽

pp. 126773 ◽

Cited By ~ 1

Author(s):

Yuancheng Li ◽

Menglong Sun ◽

Siru Ren ◽

Huiqin Ling ◽

Tao Hang ◽

...

Keyword(s):

Copper Oxide ◽

Oxide Layer ◽

Whisker Growth ◽

Small Diameter ◽

Growth Behavior ◽

Tin Whisker

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PS03 Effects of compressive stress on fatigue crack growth behavior in Ti-6A1-4V alloy

The Proceedings of the Materials and Mechanics Conference ◽

10.1299/jsmemm.2009.428 ◽

2009 ◽

Vol 2009 (0) ◽

pp. 428-430

Author(s):

Ryuta HASHIMUKOU ◽

Takashi NAKAMURA ◽

Hiroyuki OGUMA ◽

Yuto SHINOHARA

Keyword(s):

Fatigue Crack ◽

Fatigue Crack Growth ◽

Crack Growth ◽

Compressive Stress ◽

Growth Behavior ◽

Crack Growth Behavior ◽

Fatigue Crack Growth Behavior

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Crack Growth Behavior and Redistribution of Residual Stress Caused by Crack Propagation from Residual Tensile Stress Field through Residual Compressive Stress Field

Proceedings of the 1992 Annual Meeting of JSME/MMD ◽

10.1299/jsmezairiki.2004.0_99 ◽

2004 ◽

Vol 2004 (0) ◽

pp. 99-100

Author(s):

Yasuaki Hashikura ◽

Masahiro Otaka ◽

Kazuo Ogawa ◽

Kotoji Ando

Keyword(s):

Residual Stress ◽

Stress Field ◽

Tensile Stress ◽

Crack Propagation ◽

Crack Growth ◽

Compressive Stress ◽

Growth Behavior ◽

Crack Growth Behavior ◽

Residual Tensile Stress ◽

Tensile Stress Field

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The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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