An ELF Radiation Model for Estimating the Transient Electric Behavior of Space Units

Author(s):  
Christos D. Nikolopoulos ◽  
Anargyros T. Baklezos ◽  
Marco Nicoletto ◽  
Illario Marziali ◽  
Demis Boschetti ◽  
...  
1988 ◽  
Author(s):  
A. T. Hopkins ◽  
Darrell L. Palmer ◽  
Jeffrey R. Brown

Mathematics ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 458
Author(s):  
Leobardo Hernandez-Gonzalez ◽  
Jazmin Ramirez-Hernandez ◽  
Oswaldo Ulises Juarez-Sandoval ◽  
Miguel Angel Olivares-Robles ◽  
Ramon Blanco Sanchez ◽  
...  

The electric behavior in semiconductor devices is the result of the electric carriers’ injection and evacuation in the low doping region, N-. The carrier’s dynamic is determined by the ambipolar diffusion equation (ADE), which involves the main physical phenomena in the low doping region. The ADE does not have a direct analytic solution since it is a spatio-temporal second-order differential equation. The numerical solution is the most used, but is inadequate to be integrated into commercial electric circuit simulators. In this paper, an empiric approximation is proposed as the solution of the ADE. The proposed solution was validated using the final equations that were implemented in a simulator; the results were compared with the experimental results in each phase, obtaining a similarity in the current waveforms. Finally, an advantage of the proposed methodology is that the final expressions obtained can be easily implemented in commercial simulators.


2004 ◽  
Vol 138 (1-2) ◽  
pp. 136-154 ◽  
Author(s):  
Fengshan Liu ◽  
Hongsheng Guo ◽  
Gregory J. Smallwood

2008 ◽  
Author(s):  
Tatsuhiko Sato ◽  
Hiroshi Yasuda ◽  
Masashi Takada ◽  
Takashi Nakamura ◽  
Daiki Satoh ◽  
...  

2015 ◽  
Vol 21 (S4) ◽  
pp. 60-65 ◽  
Author(s):  
Alexandr Knápek ◽  
Tomáš Radlička ◽  
Stanislav Krátký

AbstractThis paper deals with an optimization of a field-emission structure concept based on vertically aligned carbon nanotubes (CNT). A design concept for a fabrication method for a gate structure based on electron beam lithography is reviewed in the first part of the paper. A single carbon nanotube is grown by the PECVD method inside the gate structure. Calculations and simulations that help determine gate structure proportions in order to obtain the best possible electron reduced brightness and to predict the cathode's electric behavior are also essential parts of this study.


2012 ◽  
Vol 2 (3) ◽  
pp. 323-332 ◽  
Author(s):  
Philip W. C. Hon ◽  
Amir A. Tavallaee ◽  
Qi-Sheng Chen ◽  
Benjamin S. Williams ◽  
Tatsuo Itoh

1999 ◽  
Vol 251 (5) ◽  
pp. 336-339 ◽  
Author(s):  
Jianming Zeng ◽  
Lirong Zheng ◽  
Chenglu Lin ◽  
M. Alexe ◽  
A. Pignolet ◽  
...  

Author(s):  
Yongzhong Wu ◽  
Jianqiang Zhu ◽  
Zhixiang Zhang ◽  
Yangshuai Li

Understanding the radiation model of a flash lamp is essential for the reflector design of a laser amplifier. Reflector design often involves several simplifying assumptions, like a point or Lambertian source; either of these assumptions may lead to significant errors in the output distribution. In practice, source non-idealities usually result in sacrificing the amplifier’s gain coefficient. We propose a novel test technique for attaining the xenon flash lamp absolute spectral intensity at various angles of view, and then accurately predict radiation distributions and generate the reflector shape. It is shown that due to the absorption of emitted radiation by the lamp itself, the behavior of the radiation model at various wavelengths is different. Numerical results of xenon plasma absorption coefficient were compared with the measured data. A reasonable agreement was obtained for the absorption coefficient parameters. Thus, this work provides a useful analytical tool for the engineering design of laser amplifier reflectors using xenon flash lamps as pumps.


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