Flow and Gauge Sensor Fusion in Vapour Phase Soldering Ovens for Optimized Process Control

Author(s):  
Attila Geczy ◽  
Mohamed Amine Alaya ◽  
Egon Rozs ◽  
Daniel Straubinger ◽  
Balazs Illes
2019 ◽  
Vol 31 (3) ◽  
pp. 169-175 ◽  
Author(s):  
Mohamed Amine Alaya ◽  
Attila Geczy ◽  
Balazs Illes ◽  
Gábor Harsányi ◽  
David Bušek

Purpose The purpose of the paper is to improve the control of vapour phase soldering (VPS). To enable better productivity and assembling quality, the industry needs to provide precise control and measurements during assembling. In the paper, a special monitoring method is presented for VPS to enable improved process control and oven state identification. Design/methodology/approach The work presents the investigation of the workspace with dynamic and gage type pressure sensors in fusion with thermocouples. Different sensors were evaluated to find an appropriate type. The relation between the temperature and the pressure was investigated, according to the setup of the oven. The effect of inserting a printed circuit board (PCB) on the pressure of the vapour inside the oven was also investigated with the pressure/power functions. Findings It was found that the novel gage-type sensors enable better precision than solutions seen in previous literature. The sensors are able to monitor the decreasing vapour concentration when a PCB is inserted to the workspace. It was found that there is a suggested minimum power to sustain a well-developed vapour column for soldering in saturated vapour. An inflexion point highlights this in the pressure/power function, in accordance with the temperature/power curve. Originality/value The research presents original works with aspects of a novel sensor fusion concept and work space monitoring for better process control and improved soldering quality.


ACS Sensors ◽  
2020 ◽  
Vol 5 (8) ◽  
pp. 2467-2475
Author(s):  
Amanda M. Lines ◽  
Gabriel B. Hall ◽  
Susan Asmussen ◽  
Jarrod Allred ◽  
Sergey Sinkov ◽  
...  

2004 ◽  
Author(s):  
John J. Connors ◽  
Kevin Hill ◽  
David Hanekamp ◽  
William F. Haley ◽  
Robert J. Gallagher ◽  
...  

Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.


1956 ◽  
Vol 48 (2) ◽  
pp. 81-84
Author(s):  
William Priestley ◽  
B. Dudenbostel, Jr.

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