Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETs

2000 ◽  
Author(s):  
K.G. Anil ◽  
T. Pompl ◽  
I. Eisele
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Hot Carrier ◽  
Gate Oxide Thickness ◽  
Hot Carrier Degradation

Analysis of gate oxide thickness hot carrier effects in surface channel P-MOSFET's

1995 ◽  
Vol 42 (1) ◽  
pp. 116-122 ◽  
Author(s):  
B.S. Doyle ◽  
K.R. Mistry ◽  
Cheng-Liang Huang
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Hot Carrier ◽  
Gate Oxide Thickness ◽  
Hot Carrier Effects

Improved Reliability With a New Plasma Nh3 Process for 0.35μιη P+ Poly-Gate Nitrided Oxide P-Mosfet's

1996 ◽  
Vol 446 ◽  
Author(s):  
A. Bravaix ◽  
D. Vuillaume ◽  
D. Goguenheim ◽  
V. Lasserre ◽  
A. Straboni ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Barrier Properties ◽  
Oxide Thickness ◽  
Lower Amount ◽  
Interface Traps ◽  
Gate Oxides ◽  
Hot Carrier ◽  
Gate Oxide Thickness ◽  
Donor Type ◽  
Main Influence

AbstractThe electrical properties and the hot-carrier reliability of P+ poly-gate P-MOSFET's are investigated for advanced 0.35 μπι LDD CMOS technologies. It is shown that surface-channel p-devices with an optimized plasma NH3 nitrided gate-oxide have good barrier properties and electrical performances which lead to a higher hot-carrier immunity in 8nm thick nitrided gate-oxides than in pure oxides using DC and AC experiments. The AC stressing shows that reducing the gate-oxide thickness leads to a larger influence of electron detrapping inducing a stronger influence of donor type interface traps than the usual build-up of negative charges. These distinct degradation mechanisms are less significant in nitrided oxide p-MOSFET's due to the lower lateral electric field leading to a lower amount of trapped charges which are quickly suppressed during subsequent detrapping phases leaving the main influence of the interface traps.

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