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Flat-band voltage shift in metal-gate/high- k /Si stacks
Chinese Physics B
◽
10.1088/1674-1056/20/9/097303
◽
2011
◽
Vol 20
(9)
◽
pp. 097303
◽
Cited By ~ 7
Author(s):
An-Ping Huang
◽
Xiao-Hu Zheng
◽
Zhi-Song Xiao
◽
Zhi-Chao Yang
◽
Mei Wang
◽
...
Keyword(s):
Flat Band
◽
Flat Band Voltage
◽
Metal Gate
◽
Voltage Shift
◽
High K
Download Full-text
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Cited By
References
The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
◽
10.1109/essderc.2011.6044230
◽
2011
◽
Cited By ~ 1
Author(s):
BeomYong Kim
◽
YunHyuck Ji
◽
SeungMi Lee
◽
BongSeok Jeon
◽
KeeJeung Lee
◽
...
Keyword(s):
Ion Implantation
◽
Flat Band
◽
Flat Band Voltage
◽
Gate Stacks
◽
Voltage Shift
◽
High K
Download Full-text
Atomic mechanism of Flat band voltage shifts by Oxide dipole Layers in High K-Metal Gate Stacks
10.7567/ssdm.2010.b-3-1
◽
2010
◽
Author(s):
J. Robertson
◽
L. Lin
Keyword(s):
Flat Band
◽
Flat Band Voltage
◽
Gate Stacks
◽
Metal Gate
◽
Atomic Mechanism
◽
High K
Download Full-text
Novel Exploration of Flat-Band Voltage Manipulation by NPT for Advanced High-k/Metal-Gate CMOS Technology
ECS Meeting Abstracts
◽
10.1149/ma2019-01/23/1174
◽
2019
◽
Keyword(s):
Cmos Technology
◽
Flat Band
◽
Flat Band Voltage
◽
Metal Gate
◽
High K
Download Full-text
Novel Exploration of Flat-Band Voltage Manipulation by Nitrogen Plasma Treatment for Advanced High-k/Metal-Gate CMOS Technology
ECS Transactions
◽
10.1149/08903.0055ecst
◽
2019
◽
Vol 89
(3)
◽
pp. 55-59
Author(s):
Jiaxin Yao
◽
Zhaozhao Hou
◽
Zhenhua Wu
◽
Huaxiang Yin
Keyword(s):
Plasma Treatment
◽
Cmos Technology
◽
Nitrogen Plasma
◽
Flat Band
◽
Flat Band Voltage
◽
Metal Gate
◽
High K
Download Full-text
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks
Applied Physics Letters
◽
10.1063/1.3491292
◽
2010
◽
Vol 97
(13)
◽
pp. 132908
◽
Cited By ~ 8
Author(s):
X. H. Zheng
◽
A. P. Huang
◽
Z. S. Xiao
◽
Z. C. Yang
◽
M. Wang
◽
...
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Flat Band
◽
Flat Band Voltage
◽
Metal Gate
◽
High K
Download Full-text
Suppression of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-k/SiO2Interface in a Gate Stack Structure
Japanese Journal of Applied Physics
◽
10.1143/jjap.49.06gh03
◽
2010
◽
Vol 49
(6)
◽
pp. 06GH03
◽
Cited By ~ 1
Author(s):
Yuta Iwashita
◽
Tetsuya Adachi
◽
Kenji Itaka
◽
Atsushi Ogura
◽
Toyohiro Chikyow
Keyword(s):
Fermi Level
◽
Flat Band
◽
Diamond Like Carbon
◽
Flat Band Voltage
◽
Gate Stack
◽
Voltage Shift
◽
Fermi Level Pinning
◽
High K
Download Full-text
Re-examination of Flat-Band Voltage Shift for High-k MOS Devices
2007 IEEE Symposium on VLSI Technology
◽
10.1109/vlsit.2007.4339731
◽
2007
◽
Cited By ~ 20
Author(s):
K. Iwamoto
◽
A. Ogawa
◽
Y. Kamimuta
◽
Y. Watanabe
◽
W. Mizubayashi
◽
...
Keyword(s):
Flat Band
◽
Flat Band Voltage
◽
Voltage Shift
◽
Mos Devices
◽
High K
Download Full-text
Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature
Applied Physics Express
◽
10.35848/1882-0786/abc516
◽
2020
◽
Vol 13
(11)
◽
pp. 111006
Author(s):
Li-Chuan Sun
◽
Chih-Yang Lin
◽
Po-Hsun Chen
◽
Tsung-Ming Tsai
◽
Kuan-Ju Zhou
◽
...
Keyword(s):
Low Temperature
◽
Trap Density
◽
Flat Band
◽
Interface Trap Density
◽
Interface Trap
◽
Flat Band Voltage
◽
Voltage Shift
Download Full-text
Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode
Journal of Nanomedicine & Nanotechnology
◽
10.4172/2157-7439.s7-005
◽
2015
◽
Vol 01
(s7)
◽
Author(s):
Jianfeng Gao
◽
Hong Yang
Keyword(s):
Chemical Vapor
◽
Oxide Thickness
◽
Flat Band
◽
Organic Chemical
◽
Flat Band Voltage
◽
Equivalent Oxide Thickness
◽
Metal Gate
◽
Tin Film
◽
Metal Organic
◽
Organic Chemical Vapor Deposition
Download Full-text
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling
Scientific Reports
◽
10.1038/srep43561
◽
2017
◽
Vol 7
(1)
◽
Cited By ~ 1
Author(s):
Sung Heo
◽
Hyoungsun Park
◽
Dong-Su Ko
◽
Yong Su Kim
◽
Yong Koo Kyoung
◽
...
Keyword(s):
Work Function
◽
Direct Evidence
◽
Depth Profiling
◽
Flat Band
◽
Flat Band Voltage
◽
Voltage Shift
Download Full-text
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