Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation

2016 46th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2016.7599684 ◽

2016 ◽

Author(s):

Fabian Horst ◽

Michael Graef ◽

Fabian Hosenfeld ◽

Atieh Farokhnejad ◽

Franziska Hain ◽

...

Keyword(s):

Circuit Simulation ◽

Compact Model ◽

Double Gate ◽

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A Physics-Based Model of Double-Gate Tunnel FET for Circuit Simulation

IETE Journal of Research ◽

10.1080/03772063.2015.1082443 ◽

2015 ◽

Vol 62 (3) ◽

pp. 387-393 ◽

Author(s):

A. Narendiran ◽

K. Akhila ◽

B. Bindu

Keyword(s):

Circuit Simulation ◽

Double Gate ◽

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Investigation of Homo and Hetero-Junction Double-Gate Tunnel-FET-Based Adiabatic Inverter Circuits

IETE Journal of Research ◽

10.1080/03772063.2020.1859951 ◽

2020 ◽

pp. 1-9

Author(s):

M. Pown ◽

S. Sandeep ◽

B. Lakshmi

Keyword(s):

Double Gate ◽

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Double gate vertical tunnel FET for hybrid CMOS-TFET based low standby power logic circuits

2013 Annual International Conference on Emerging Research Areas and 2013 International Conference on Microelectronics, Communications and Renewable Energy ◽

10.1109/aicera-icmicr.2013.6575992 ◽

2013 ◽

Author(s):

Abhishek Mishra ◽

Manisha Pattanaik ◽

Varun Sharma

Keyword(s):

Logic Circuits ◽

Double Gate ◽

Hybrid Cmos ◽

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A ferroelectric capacitor compact model for circuit simulation

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1435109 ◽

2005 ◽

Author(s):

Chao-gane Wei ◽

Tian-ling Ren ◽

Dan Xie ◽

Zhi-Gang Zhang ◽

Jun Zhu ◽

...

Keyword(s):

Circuit Simulation ◽

Compact Model ◽

Ferroelectric Capacitor

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A 2-D Double Gate Heterojunction Tunnel-FET Based on AlGaSb/InAs: Analytical Analysis on Electric Field and Capacitance

10.1109/icsct53883.2021.9642561 ◽

2021 ◽

Author(s):

Sunjida Sultana ◽

Md. Tawfiq Amin ◽

Twisha Titirsha

Keyword(s):

Electric Field ◽

Double Gate ◽

Analytical Analysis ◽

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Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2862155 ◽

2018 ◽

Vol 65 (10) ◽

pp. 4282-4289 ◽

Author(s):

Corentin Pigot ◽

Marc Bocquet ◽

Fabien Gilibert ◽

Marina Reyboz ◽

Olga Cueto ◽

...

Keyword(s):

Phase Change ◽

Circuit Simulation ◽

Phase Change Memory ◽

Compact Model ◽

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A novel structure for optimization of switching speed in nanoscale Double Gate Tunnel FET

2008 IEEE International Conference on Semiconductor Electronics ◽

10.1109/smelec.2008.4770374 ◽

2008 ◽

Author(s):

Vadizadeh Mahdi ◽

Fathipour Morteza

Keyword(s):

Double Gate ◽

Switching Speed ◽

Novel Structure

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Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

Chinese Physics B ◽

10.1088/1674-1056/17/8/051 ◽

2008 ◽

Vol 17 (8) ◽

pp. 3077-3082 ◽

Author(s):

Luan Su-Zhen ◽

Liu Hong-Xia

Keyword(s):

Schottky Barrier ◽

Compact Model ◽

Thin Body ◽

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Double Gate Tunnel FET Versus Double Gate MOSFET: Electrical Properties Comparison

Lecture Notes in Electrical Engineering - Electronic Systems and Intelligent Computing ◽

10.1007/978-981-15-7031-5_75 ◽

2020 ◽

pp. 791-803

Author(s):

Menka Yadav

Keyword(s):

Electrical Properties ◽

Double Gate ◽

Double Gate Mosfet

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SET Accurate Compact Model for SET-MOSFET Hybrid Circuit Simulation

Simulation of Semiconductor Processes and Devices 2004 ◽

10.1007/978-3-7091-0624-2_62 ◽

2004 ◽

pp. 267-270

Author(s):

C. Le Royer ◽

G. Le Carval ◽

M. Sanquer

Keyword(s):

Circuit Simulation ◽

Compact Model ◽

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