Controlling BGA joint microstructures using seed crystals

2018 ◽  
Author(s):  
Z.L. Ma ◽  
S.A. Belyakov ◽  
J.W. Xian ◽  
T. Nishimura ◽  
K. Sweatman ◽  
...  
Keyword(s):  
Seed Crystals ◽  
Joint Microstructures

Coalescence growth of GaN crystals on point seed crystals using the Na flux method

2013 ◽  
Vol 10 (3) ◽  
pp. 400-404 ◽  
Author(s):  
M. Imanishi ◽  
K. Murakami ◽  
H. Imabayashi ◽  
H. Takazawa ◽  
Y. Todoroki ◽  
...  
Keyword(s):  
Flux Method ◽  
Seed Crystals ◽  
Point Seed

Effect of Zn on the intermetallics formation and reliability of Sn-3.5Ag solder on a Cu pad

2007 ◽  
Vol 22 (7) ◽  
pp. 1879-1887 ◽  
Author(s):  
Y.K. Jee ◽  
Y.H. Ko ◽  
Jin Yu
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Isothermal Aging ◽  
X Ray Diffraction ◽  
X Ray ◽  
Drop Tests ◽  
Joint Microstructures ◽  
Role Of Zn ◽  
Scanning Electron

Varying amounts of Zn (1, 3, and 7 wt%) were added to Sn–3.5Ag solder on a Cu pad, and the resultant solder joint microstructures after a reflow and isothermal aging (150 °C, up to 500 h) were investigated using scanning electron microscopy, energy dispersive x-ray, and x-ray diffraction, which were subsequently correlated to the results of microhardness and drop tests. Zinc was effective in improving the drop resistance of Sn–3.5Ag solder on the Cu pad, and an addition of 3 wt% Zn nearly doubled the number of drops-to-failure (Nf). The beneficial role of Zn was ascribed to suppression of Cu6Sn5 and precipitation of Zn-containing intermetallic compounds (IMCs). However, the Zn effect was reduced as Cu6Sn5 and Ag3Sn precipitated in a joint IMC layer after prolonged aging. The interface between Ag5Zn8 and Cu5Zn8 was resistant to drop impact, but two other layered IMC structures of Cu6Sn5/Cu3Sn and Cu5Zn8/Cu6Sn5 were not.

Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt

2002 ◽  
Vol 57 (2) ◽  
pp. 307-314
Author(s):  
M. Nasir Khan ◽  
Shin-ichi Nishizawa ◽  
Tomohisa Kato ◽  
Ryoji Kosugi ◽  
Kazuo Arai
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Layer ◽  
Seed Crystals ◽  
Silicon Melt

scholarly journals "How to use ""random"" microseeding before you get your first crystals"

2014 ◽  
Vol 70 (a1) ◽  
pp. C1756-C1756
Author(s):  
Patrick Shaw Stewart
Keyword(s):  
Heterogeneous Nucleation ◽  
Protein Crystallization ◽  
Seed Stock ◽  
Seed Crystals ◽  
Industrial Group ◽  
Metastable Zone ◽  
Initial Crystal

Random Microseed Matrix-Screening (rMMS), where seed crystals are added automatically to random crystallization screens, is a significant recent breakthrough in protein crystallization [1]. One industrial group used the method to solve 38 out of 70 structures generated in a three year period, finding particular success with antibody complexes [2]. rMMS not only produces more hits, it also generates better-diffracting crystals - because crystals are more likely to grow in the metastable zone. This assumes, however, that you have some initial crystal hits to make a seed stock from. This presentation will look at unusual methods of nucleation, including cross-seeding [3], heterogeneous nucleation, and nucleation with precipitants [4].

Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration

2005 ◽  
Vol 44 (No. 24) ◽  
pp. L778-L780 ◽  
Author(s):  
Noritaka Usami ◽  
Masayuki Kitamura ◽  
Takamasa Sugawara ◽  
Kentaro Kutsukake ◽  
Keisuke Ohdaira ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Floating Zone ◽  
Seed Crystals ◽  
Zone Growth

scholarly journals Effect of pretreatment of seed crystals on the initial breeding of potassium alum.

1985 ◽  
Vol 11 (2) ◽  
pp. 193-197 ◽  
Author(s):  
Kenji Shimizu ◽  
Chie Endo ◽  
Noriaki Kubota ◽  
Toshikuni Yonemoto ◽  
Teiriki Tadaki
Keyword(s):  
Potassium Alum ◽  
Seed Crystals

Microstructures formed by secondary growth of fired ZSM-5 seed crystals

2007 ◽  
Vol 15 (4) ◽  
pp. 405-410 ◽  
Author(s):  
Shigeyuki Uemiya ◽  
Atsushi Tanigawa ◽  
Tatsuya Koike ◽  
Yukichi Sasaki ◽  
Takayuki Ban ◽  
...  
Keyword(s):  
Secondary Growth ◽  
Seed Crystals

scholarly journals Formation of Dislocations in the Growth of Silicon along Different Crystallographic Directions—A Molecular Dynamics Study

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 346 ◽  
Author(s):  
Naigen Zhou ◽  
Xiuqin Wei ◽  
Lang Zhou
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Formation Mechanism ◽  
Atomic Interaction ◽  
Seed Crystals ◽  
Dynamics Simulations ◽  
Dislocation Formation

Molecular dynamics simulations of the seeded solidification of silicon along <100>, <110>, <111> and <112> directions have been carried out. The Tersoff potential is adopted for computing atomic interaction. The control of uniaxial strains in the seed crystals is enabled in the simulations. The results show that the dislocation forms stochastically at the crystal/melt interface, with the highest probability of the formation in <111> growth, which agrees with the prediction from a previously proposed twinning-associated dislocation formation mechanism. Applications of the strains within a certain range are found to inhibit the {111}-twinning-associated dislocation formation, while beyond this range they are found to induce dislocation formation by different mechanisms.

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