Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt

2002 ◽  
Vol 57 (2) ◽  
pp. 307-314
Author(s):  
M. Nasir Khan ◽  
Shin-ichi Nishizawa ◽  
Tomohisa Kato ◽  
Ryoji Kosugi ◽  
Kazuo Arai
2004 ◽  
Vol 82 (11) ◽  
pp. 3251-3253 ◽  
Author(s):  
Dong-Woo Shin ◽  
Sam Shik Park ◽  
Yong-Ho Choa ◽  
Koichi Niihara

Author(s):  
А.С. Гращенко ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
А.В. Редьков

The mechanical properties of composite coatings made of silicon carbide on graphite are studied for the first time. For the deposition of coatings, a new method of annealing the initial graphite was used, which was in contact with a silicon melt in an atmosphere of carbon monoxide.The samples were studied by nanoindentation and scanning electron microscopy. It is shown that the formed coating consists of a continuous film of monocrystalline silicon carbide lying on the surface, dendrites and crystalline druses, with roots going deep into the sample through a system of pores. It is shown that the coating significantly increases the mechanical characteristics of the graphite surface, including the microhardness.


2021 ◽  
Vol 87 (8) ◽  
pp. 69-75
Author(s):  
K. M. Kutyaeva ◽  
E. G. Cheblakova ◽  
Yu. A. Malinina ◽  
A. A. Shvetsov ◽  
N. Yu. Beylina

An analytical scheme for the analysis of silicified graphite SG-P, a four-phase composite material consisting of silicon, carbon, silicon carbide and silicon dioxide, has been developed. The procedure can be successfully used in the quality control of raw materials and in the study of the phase composition of finished products The porosity and density of the graphite base, as well as the impurities contained in the base and silicon change the course of silicification and the properties of the finished product as well. The impurities are the main reason for the formation of delamination, swelling, cracking and light spots on the treated surfaces. It should be noted that the iron content 0.023 – 0.17 wt.% in the carbon material intended for silicification, leads to catalytic graphitization of the artificial graphite and dispersion in the silicon melt. Methods of rapid assessment of the quality of raw materials are to be used to provide quick understanding of their suitability for manufacturing final products on their base. Quality control of the silicified graphite produced at the JSC «Research Institute Graphite» is carried out by determination of the phase composition of the finished product by chemical and X-ray diffraction methods of analysis. The content of silicon carbide (not less than 45%), unbound silicon and carbon (not more than 20 and 35%, respectively) affects the corrosion resistance and thermal expansion of silicified graphite.


2009 ◽  
Vol 7 (5) ◽  
pp. 707-711 ◽  
Author(s):  
Tarek Ben Salah ◽  
Mahbouba Amairi ◽  
Zina Sassi ◽  
Hervé Morel

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1090
Author(s):  
Maoqiang Rui ◽  
Yaxiang Zhang ◽  
Jing Ye

Reaction-bonded silicon carbide ceramics were sintered by infiltration of Si and B–Si alloy under an argon atmosphere at different temperatures. The element boron was added to the silicon melt to form a B–Si alloy first. The mechanical properties of samples were improved by infiltration of the B–Si melt. The samples infiltrated with the Si-only melt were found to be very sensitive to experimental temperature. The bending strengths of 58.6 and 317.0 MPa were achieved at 1530 and 1570 °C, respectively. The sample made by infiltration of B–Si alloy was successfully sintered at 1530 °C. The relative density of the sample was more than 90%. The infiltration of B–Si alloy reduced the sintering temperature and the bending strength reached 326.9 MPa. The infiltration mechanism of B–Si alloy is discussed herein.


2011 ◽  
Vol 45 (6) ◽  
pp. 828-831 ◽  
Author(s):  
M. G. Mynbaeva ◽  
P. L. Abramov ◽  
A. A. Lebedev ◽  
A. S. Tregubova ◽  
D. P. Litvin ◽  
...  

Author(s):  
С.К. Брантов ◽  
Е.Б. Якимов

AbstractA new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.


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