Point Defects and Radiation Damage Processes in α-Quartz

Author(s):  
D.L. Griscom
Author(s):  
L. Reimer

Most information about a specimen is obtained by elastic scattering of electrons, but one cannot avoid inelastic scattering and therefore radiation damage by ionisation as a primary process of damage. This damage is a dose effect, being proportional to the product of lectron current density j and the irradiation time t in Coul.cm−2 as long as there is a negligible heating of the specimen.Therefore one has to determine the dose needed to produce secondary damage processes, which can be measured quantitatively by a chemical or physical effect in the thin specimen. The survival of micro-organisms or the decrease of photoconductivity and cathodoluminescence are such effects needing very small doses (see table).


Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1350
Author(s):  
Dmitriy I. Shlimas ◽  
Artem L. Kozlovskiy ◽  
Askar Kh. Syzdykov ◽  
Daryn B. Borgekov ◽  
Maxim V. Zdorovets

The aim of this work was to study resistance to helium accumulation processes in the structure of the surface layer of lithium-containing ceramics and the subsequent destruction and embrittlement processes, depending on radiation fluence. The objects of study were Li2TiO3-type ceramics obtained by thermal sintering. The fluence dependency of changes in the structural and strength properties of ceramics was determined to be in the range from 1018 to 1022 ion/m2, which corresponded to the concentration of implanted helium from 0.01% to 0.8–1 at.%. Irradiation was carried out at a temperature of 700 °C, which made it possible to simulate the processes of radiation damage that were closest to the real conditions in the reactor core. During the studies carried out, it was found that, at irradiation fluences of 1018–1020 ion/m2, the formation of point radiation defects was equaled by the process of thermal annealing of defects, as a result of which the concentration of defects and their effect on the change in the structural and strength properties of ceramics were insignificant. An increase in the concentration of implanted helium in the structure of the surface layer to above 0.5 at.% led to the dominance of radiation damage processes over the annealing of defects and the formation of gas-filled cavities, which negatively affects the strength of ceramics.


Author(s):  
Mohammad Abu-Shams ◽  
Jeffery Moran ◽  
Ishraq Shabib

Abstract The effects of radiation damage on bcc tungsten with preexisting helium and hydrogen clusters have been investigated in a high-energy environment via a comprehensive molecular dynamics simulation study. This research determines the interactions of displacement cascades with helium and hydrogen clusters integrated into a tungsten crystal generating point defect statistics. Helium or hydrogen clusters of atoms~0.1% of the total number of atoms have been randomly distributed within the simulation model and primary knock-on-atom (PKA) energies of 2.5, 5, 7.5 and 10 keV have been used to generate displacement cascades. The simulations quantify the extent of radiation damage during a simulated irradiation cycle using the Wigner-Seitz point defect identification technique. The generated point defects in crystals with and without pre-existing helium/hydrogen defects exhibit a power relationship with applied PKA energy. The point defects are classified by their atom type, defect type, and distribution within the irradiated model. The presence of pre-existing helium and hydrogen clusters significantly increases the defects (5 - 15 times versus pure tungsten models). The vacancy composition is primarily tungsten (e. g., ~70% at 2.5 keV) in models with pre-existing helium, but the interstitials are primarily He (e. g., ~89% at 10 keV). On the other hand, models with pre-existing hydrogen have a vacancy composition that is primarily tungsten (more than 90% irrespective of PKA energy), and the interstitial composition is more balanced between tungsten (average 46%) and hydrogen (average 54%) interstitials across the PKA range. The distribution of the atoms reveals that the tungsten point defects prefer to reside close to the position of cascade initiation, but helium or hydrogen defects reside close to the positions where clusters are built.


1976 ◽  
Vol 41 (5) ◽  
pp. 1575-1583 ◽  
Author(s):  
Michio Kiritani ◽  
Yasuhiro Maehara ◽  
Hiroshi Takata

1993 ◽  
Vol 302 ◽  
Author(s):  
J. Walter ◽  
W. Garber ◽  
R. Wunstorf ◽  
W. Bugg ◽  
J. Harvey ◽  
...  

ABSTRACTThe importance of bulk defects in Si to the performance of Si radiation detectors is discussed and the current state of knowledge about deep level defects, including those induced by radiation damage, is briefly reviewed. The importance and origins of the fluctuations in the spatial distribution of the shallow point defects which determine the uncompensated net impurity density are discussed and information on this problem in FZ silicon, multipass FZ silicon, neutron transmutation doped Si, and radiation damaged Si is presented and compared to what should be expected on the basis of simple modeling. A new model for radiation damage induced changes in the net uncompensated impurity density is reviewed and compared to experimental data on fast neutron damage in Si.


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