The synthesis of counter circuit layout design based on CMOS technology 0.35 μm

This work explains the process of designing and synthesizing a MOD 13 binary down counter using 180 nm CMOS technology transistors. The beginning of the count is a combination of 1110(2), the end of the count is 0010(2). Simulations are made at the circuit level (transient analysis) to verify that the circuit functions correctly, then the integrated circuit layout is prepared by connecting the components manually. Finally, the layout is simulated to see how the existence of parasitic resistances and capacitances affect the output signals and it is used to estimate the maximum allowable clock frequency (fclk).

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DESAIN TATA LETAK SIRKUIT TERPADU DALAM PERSPEKTIF PERBANDINGAN HUKUM INTEREN

Veritas et Justitia ◽

10.25123/vej.2531 ◽

2017 ◽

Vol 3 (1) ◽

pp. 218

Author(s):

Sudjana Sudjana

Keyword(s):

Intellectual Property ◽

Property Rights ◽

Intellectual Property Rights ◽

Integrated Circuit ◽

Legal Protection ◽

Layout Design ◽

Moral Rights ◽

Circuit Layout ◽

The Government

<p><em>The author discusses the legal protection of integrated circuit layout design as provided by Law 32/2000 and compares it with how the government regulates and protect other sorts of intellectual property rights (copyright, trademarks, patents, etc.). The purpose of this comparison is to reveal shortcomings as well as the strength of each different regulations. This study reveals that Law 32/2000 as compared to other IPR protections has yet to provide legal protection of inventor’s moral rights, priority rights as well as temporary decision. At the same time, all regulations cannot be fully implemented due to the lack of or insufficient implementing regulations. </em></p>

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Fabrication of microbridges in standard complementary metal oxide semiconductor technology

Canadian Journal of Physics ◽

10.1139/p89-032 ◽

1989 ◽

Vol 67 (4) ◽

pp. 184-189 ◽

Cited By ~ 2

Author(s):

M. Parameswaran ◽

Lj. Ristic ◽

A. C. Dhaded ◽

H. P. Baltes ◽

W. Allegretto ◽

...

Keyword(s):

Metal Oxide ◽

Integrated Circuit ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Layout Design ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Cmos Process ◽

Digital Cmos ◽

Sensor Applications

Complementary metal oxide semiconductor (CMOS) technology is one of the leading fabrication technologies of the semiconductor integrated-circuit industry. We have discovered features inherent in the standard CMOS fabrication process that lend themselves to the manufacturing of micromechanical structures for sensor applications. In this paper we present an unconventional layout design methodology that allows us to exploit the standard CMOS process for producing microbridges. Two types of microbridges, bare polysilicon microbridges and sandwiched oxide microbridges, have been manufactured by first implementing a special layout design in an industrial digital CMOS process, followed by a postprocessing etching step.

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