Switching and analog performance of 0.6 volt, 20 nm effective channel length Si ASIC Dual Carrier Field Effect Transistor and three dimensional field effect transistor

ASICON 2001. 2001 4th International Conference on ASIC Proceedings (Cat. No.01TH8549) ◽

10.1109/icasic.2001.982704 ◽

2002 ◽

Author(s):

C. Huang ◽

Y.H. Yang ◽

D.H. Huang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Channel Length ◽

Analog Performance ◽

Effect Transistor ◽

20 Nm ◽

Effective Channel

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Experimental verification of the principle of operation of building blocks of 0.6 volt Si and SiGe vertical dual carrier field effect transistor FPGA with effective channel length of 5-20 nm

ASICON 2001. 2001 4th International Conference on ASIC Proceedings (Cat. No.01TH8549) ◽

10.1109/icasic.2001.982605 ◽

2002 ◽

Cited By ~ 5

Author(s):

Y.Z. Xu ◽

L. Chen ◽

Z.M. Tang ◽

Z.S. Li ◽

C.L. Wu ◽

...

Keyword(s):

Experimental Verification ◽

Field Effect ◽

Field Effect Transistor ◽

Building Blocks ◽

Channel Length ◽

Effect Transistor ◽

20 Nm ◽

Effective Channel

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Integrated Device and Circuit Simulation of "Dual Carrier Field Effect Transistor" and "Three Dimensional Field Effect Transistor" with Effective Channel Length of 5-20nm and Their ASIC and SOC

2005 6th International Conference on ASIC ◽

10.1109/icasic.2005.1611508 ◽

2006 ◽

Author(s):

Y.H. Yang ◽

D.H. Huang ◽

C. Huang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Circuit Simulation ◽

Three Dimensional ◽

Channel Length ◽

Effect Transistor ◽

Integrated Device ◽

Effective Channel

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A metal‐oxide‐semiconductor field‐effect transistor with a 20‐nm channel length

Journal of Applied Physics ◽

10.1063/1.346512 ◽

1990 ◽

Vol 68 (5) ◽

pp. 2493-2495 ◽

Cited By ~ 14

Author(s):

A. Hartstein ◽

N. F. Albert ◽

A. A. Bright ◽

S. B. Kaplan ◽

B. Robinson ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

20 Nm

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Principle of operation and performance of 1.3 volt SOI resistor load vertical dual carrier field effect transistor flip flop fabricated for SRAM, FPGA and switching SOC with effective channel length of 30nm

2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03 ◽

10.1109/icasic.2003.1277473 ◽

2003 ◽

Cited By ~ 3

Author(s):

Tang ◽

Li ◽

Yang ◽

Han ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Flip Flop ◽

Effect Transistor ◽

And Performance ◽

Effective Channel ◽

Sram Fpga

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The Effect of Effective Channel Length on a Silicon Nanowire Fin Field Effect Transistor

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2013.2793 ◽

2013 ◽

Vol 10 (4) ◽

pp. 964-967

Author(s):

Fatimah K. A. Hamid ◽

Sohail Anwar ◽

N. Aziziah Amin ◽

Zaharah Johari ◽

Hatef Sadeghi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Channel Length ◽

Effect Transistor ◽

Effective Channel

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Reconsideration of effective channel length for metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.064303 ◽

2014 ◽

Vol 53 (6) ◽

pp. 064303 ◽

Cited By ~ 3

Author(s):

Kazuo Terada ◽

Kazuhiko Sanai ◽

Katsuhiro Tsuji

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Effective Channel

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Device physics and design theory of Si, Ge and Si/sub 1-x/Ge/sub x/ vertical dual carrier field effect transistor integrated circuits on insulator with effective channel length of 5-18nm

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306162 ◽

2006 ◽

Author(s):

Y.Z. Xu ◽

Y.F. Zhao ◽

D. Bai ◽

Y.H. Yang ◽

R. Yang ◽

...

Keyword(s):

Integrated Circuits ◽

Field Effect ◽

Design Theory ◽

Field Effect Transistor ◽

Channel Length ◽

Device Physics ◽

Effect Transistor ◽

Effective Channel

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Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects

Semiconductor Science and Technology ◽

10.1088/0268-1242/31/4/045009 ◽

2016 ◽

Vol 31 (4) ◽

pp. 045009 ◽

Cited By ~ 20

Author(s):

Amir Hossein Bayani ◽

Daryoosh Dideban ◽

Mehran Vali ◽

Negin Moezi

Keyword(s):

Temperature Effects ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Analog Performance ◽

Effect Transistor

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Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.796 ◽

1998 ◽

Vol 37 (Part 1, No. 3A) ◽

pp. 796-800 ◽

Cited By ~ 1

Author(s):

Ting-Huan Chang ◽

Jenn-Gee Lo ◽

Tung-Cheng Kuo ◽

Charles Ching-Hsiang Hsu ◽

Swei-Yam Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Series Resistance ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Effect Transistor ◽

Effective Channel

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Measurements of source coupled logic "exclusive or" circuit and ring oscillator of SOI Si vertical dual carrier field effect transistor with effective channel length of 5-30nm

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1434958 ◽

2005 ◽

Author(s):

Z.M. Tang ◽

G.H. Li ◽

R. Ying ◽

Y.Z. Xu ◽

Y.H. Yang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Ring Oscillator ◽

Effect Transistor ◽

Exclusive Or ◽

Effective Channel

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