Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor

1998 ◽  
Vol 37 (Part 1, No. 3A) ◽  
pp. 796-800 ◽  
Author(s):  
Ting-Huan Chang ◽  
Jenn-Gee Lo ◽  
Tung-Cheng Kuo ◽  
Charles Ching-Hsiang Hsu ◽  
Swei-Yam Yu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Series Resistance ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Length ◽  
Effect Transistor ◽  
Effective Channel

A metal‐oxide‐semiconductor field‐effect transistor with a 20‐nm channel length

1990 ◽  
Vol 68 (5) ◽  
pp. 2493-2495 ◽  
Author(s):  
A. Hartstein ◽  
N. F. Albert ◽  
A. A. Bright ◽  
S. B. Kaplan ◽  
B. Robinson ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
20 Nm

scholarly journals Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor

2019 ◽  
Vol 18 (2) ◽  
pp. 73-80
Author(s):  
Md Rabiul Islam ◽  
Md Kamrul Hasan ◽  
Md Abdul Mannan ◽  
M Tanseer Ali ◽  
Md Rokib Hasan
Keyword(s):  
Gallium Nitride ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Length ◽  
Double Gate ◽  
Effect Transistor ◽  
Silvaco Atlas

We have investigated the performance of Gallium Nitride (GaN) based Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Atlas Device Simulation Framework -Silvaco has been used to access Non-Equilibrium Green Function to distinguish the transfer characteristics curve, ON state current (ION), OFF-state current (IOFF), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Electron Current Density, Conduction Band Energy and Electric Field. The concept of Solid state device physics on the effect of gate length studied for the next generation logic applications. GaN-based DG MOSFETs shows better performance than Si-based Single gate MOSFETs. The proposed device has drawn the attention over conventional SG-MOSFET due to fas switching performance. The device turn on and turn off voltage is respectively VGS=1V(On state) and VGS-0V(OFF State). To validate our simulation tool and model results, previous research model has been investigated using Silvaco Atlas and the results obtained are compared to the previous results.

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