Experimental verification of the principle of operation of building blocks of 0.6 volt Si and SiGe vertical dual carrier field effect transistor FPGA with effective channel length of 5-20 nm
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20 Nm
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2013 ◽
Vol 10
(4)
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pp. 964-967
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2014 ◽
Vol 53
(6)
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pp. 064303
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1998 ◽
Vol 37
(Part 1, No. 3A)
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pp. 796-800
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