Design theory and fabrication process integration of 32nm node Si, Ge and Si1-xGex vertical dual carrier field effect transistor SOC for switching and communication applications

2007 ◽  
Author(s):  
C. Huang ◽  
Y.H. Yang ◽  
D. H. Huang ◽  
Y.Z. Xu ◽  
Y.F. Zhao ◽  
...  
Keyword(s):  
Field Effect ◽  
Design Theory ◽  
Field Effect Transistor ◽  
Process Integration ◽  
Fabrication Process ◽  
Effect Transistor

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

Cu/CaF2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process

2000 ◽  
Vol 39 (Part 2, No. 9A/B) ◽  
pp. L908-L910 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Hirotada Taniuchi ◽  
Takuya Arima ◽  
Minoru Tachiki ◽  
Kazuo Tsugawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Fabrication Process ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Effect Transistor
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